1) SOA ring cavity
半导体光放大器环形腔
2) vertical cavity semiconductor optical amplifiers
垂直腔半导体光放大器
1.
Research of MEMS-based tunable vertical cavity semiconductor optical amplifiers based on transfer matrix;
传输矩阵法研究MEMS可调谐垂直腔半导体光放大器
2.
Theoretical study on pulse amplification characteristics of vertical cavity semiconductor optical amplifiers;
理论研究垂直腔半导体光放大器脉冲放大特性
3.
Study on optical bandwidth characteristic of vertical cavity semiconductor optical amplifiers;
垂直腔半导体光放大器带宽特性研究
3) VCSOA
垂直腔半导体光放大器
1.
Starting from the rate equations and the theory of multilayer dielectric film,a dynamic transfer matrix model of vertical cavity semiconductor optical amplifiers(VCSOAs) was established.
从速率方程和多层介质膜理论出发,构建了垂直腔半导体光放大器(VCSOA)的动态传输矩阵模型。
2.
Frequency response characteristics of vertical cavity semiconductor optical amplifiers(VCSOAs) are investigated by utilizing small signal analysis method.
从速率方程出发,利用小信号分析方法对垂直腔半导体光放大器(VCSOA)的频率响应特性进行了研究。
3.
Based on the beam interferential theory of Fabry-Perot semiconductor laser,a bistable model of vertical cavity semiconductor optical amplifier (VCSOA) was established.
基于法布里 珀罗(F P)腔光束干涉理论,建立垂直腔半导体光放大器 (VCSOA)的双稳模型。
4) VCSOAs
垂直腔半导体光放大器
1.
In order to improve the gain saturation property of vertical-cavity semiconductor optical amplifiers(VCSOAs),based on the structure character,applying gain enhancement factor and modifying the boundary condition,the relation between input signal power and photon density was derived to study the gain saturation property.
为了改善垂直腔半导体光放大器增益饱和特性,基于其结构上的特点,引入了增益增强因子,修正了边界条件,采用建立腔内光子数与输入信号光功率关系的研究方法,分析了影响垂直腔半导体光放大器增益饱和特性因素。
2.
The bandwidth of the vertical-cavity semiconductor optical amplifiers(VCSOAs) is commonly narrow.
垂直腔半导体光放大器(VCSOAs)的带宽通常较窄,通过改变其有源区一侧的DBR膜堆结构,构造无源腔与原有源腔相耦合的耦合腔结构可优化VCSOAs带宽。
5) vertical cavity semiconductor optical amplifier
垂直腔半导体光放大器
1.
Theoretical analysis of the gain of vertical cavity semiconductor optical amplifier;
垂直腔半导体光放大器增益的理论分析
2.
With the improving of vertical cavity devices, a kind of semiconductor optical amplifier based on vertical micro Fabry-Perot resonant cavity, vertical cavity semiconductor optical amplifier (VCSOA), are proposed and widely developed in recent years.
随着垂直腔光电器件的发展,一种基于垂直微型Fabry-Perot谐振腔结构的半导体光放大器——垂直腔半导体光放大器(VCSOA)被提出,并在近几年来迅速发展。
6) Vertical-cavity semiconductor optical amplifiers
垂直腔半导体光放大器
1.
Considered with the vertical micro-cavity effects of vertical-cavity semiconductor optical amplifiers, gain properties are analyzed in reflection mode.
结合垂直腔半导体光放大器(VCSOAs)的竖直微型腔结构带来的特性,在反射工作模式情况下,分析了VCSOAs的增益特性。
补充资料：气敏半导体(见传感器半导体材料)
气敏半导体(见传感器半导体材料)
gas sensory sernieonduetor
气敏半导体gas sensory Semieonductor见传感器半导体材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条