Furthermore the optimized on-chip spiral inductor has been adopted to realized the shunt peak technology with which the broad bandwidth performance was achieved.

The thesis analyzes the model of on-chip spiral inductors and the realization of varactors.

Equivalent circuit model and parameter extraction of on-chip planar spiral inductors on silicon substrates;

This thesis mainly brings forward the particular optimizing approach that aims at the modeling,analysis and design of the integrated spiral inductors.

Based on the analyzing of the present inductor structures, a particular high performance optimization plan was proposed, which made the quality factor and the difference characteristic of the spiral inductor be remarkable enhanced.

Based on the typical lumped equivalent-circuit model of spiral inductor on silicon(SIOS) for RF integrated circuit(RFIC), differential symmetric and common planar circular spiral inductors have been simulated and computed by using the Ansoft software HFSS which is a high-performance full-wave electromagnetic(EM) field simulator.

Silicon radio-frequency (RF) integrated circuit spiral inductors are modeled and analyzed.

Several emphases about LC VCO design, including high Q on-chip inductor design, MOS-varactor design and tail current choice, are presented.

The loss mechanisms of different passive devices (on-chip inductors and capacitors) on different substrates are analyzed and compared.

Some optimization designs were made with the on-chip inductor and the RF switches to get the maximum Q-value.