1) deep trench junction termination
深阱结终端
1.
A new deep trench junction termination is proposed.
给出了双极 RF功率管新的深阱结终端结构 。
2) Silicon bipolar transistor
深阱终端结构
3) Trench
[英][trentʃ] [美][trɛntʃ]
深阱结构
1.
Techniques for Improving Breakdown Voltages Using Deep Trench;
采用深阱结构的耐压技术
4) junction termination
结终端
1.
New development of junction termination techniques for silicon power semiconductor devices are reviewed including the floating field ring, the field plate, the junction termination extension, the variation in lateral doping, "the Deep Trench" and the superjunction devices termination.
综述了硅材料功率半导体器件常用结终端技术的新发展。
5) terminal structure
终端结构
1.
Introduce the principle which indicates breakdown voltage is varied with ring spacing,ring width,the length of Field Plate by analyzing the theory with Field Plate and Field Limiting Ring of terminal structure.
本文主要通过对场板和场限环终端结构的理论分析,介绍器件终端结构击穿电压随环间距、环宽度、场板长度等参数的变化规律。
2.
In order to improve its voltage capacity, we need to design the terminal structure of devices which reaches the required standards.
为了提高其耐压能力,需要对器件进行终端结构设计,达到所要求的耐压标准。
6) termination structure
终端结构
1.
The termination structure of vertical double-diffusion metal-oxide-semiconductor field-effect transistor(VDMOSFET),field limit ring(FLR),junction termination extension(JTE)and the multiple-zone design were discussed.
通过理论计算,优化了外延层厚度和掺杂浓度,对影响击穿电压的相关结构参数进行设计,探讨了VDMOSFET的终端结构。
2.
There are two parts in the work of this thesis: researches on field-limiting ring (FLR) termination structure and field plate (FP) termination structure.
本文的工作分为两部分：场限环(FLR)终端结构和偏移场板(FP)终端结构的研究。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条