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1)  NSAG
窄条宽选区生长
1.
5 nm with a small mask width of 0-40 μm, have been obtained by use of NSAG-MOCVD in the low growth pressure of 130 mbar.
采用窄条宽选区生长化学气相沉积(NSAG-MOCVD)技术在掩膜宽度0~40μm范围内,获得波长漂移达177。
2)  selective-area-grown
选区生长
3)  selective area growth
选择区域生长
1.
10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth;
超低压选择区域生长法制备产生10GHz重复率超短光脉冲的级联电吸收调制器与分布反馈激光器单片集成光源
2.
In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22×10~2Pa) selective area growth (SAG) MOCVD technique.
采用超低压(22×10~2Pa)选择区域生长(selective area growth,SAG)金属有机化学气相沉积(metal-organic chemicalvapor deposition,MOCVD)技术成功制备了应变型InGaAsP/InGaAsP电吸收调制器(electroabsorption modulator,EAM)与分布反馈激光器(distribute feedbacklaser,DFB)单片集成光源的新型光电器件。
3.
A semiconductor optical amplifier and electroAbsorption modulator monolithically integrated with a spot-size converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology.
采用选择区域生长、量子阱混杂和非对称双波导技术制作了电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成器件。
4)  Annual width
生长轮宽
5)  extent [英][ɪk'stent]  [美][ɪk'stɛnt]
宽窄
6)  high aspect ratio region
大长宽比区
补充资料:胎圈过窄、子口窄、圈窄等
分子式:
CAS号:

性质:又称胎圈过窄、子口窄、圈窄等。轮胎工业中指两胎圈宽度不一致的现象。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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