1) surface voltage
表面电压
1.
A novel analytic model on the relationship about the surface voltage and the PN junction electric field with the ion dose in the drift of gate off MOS is presented.
本文提出了偏置栅MOS管漂移区离子注入剂量对表面电压和PN结边界电场两者关系的一种新的分析模型 ,借助数学推导得到该模型的计算方程 ,通过仿真曲线图能清楚地看到它们之间的变化关系 ,同时说明提高偏置栅MOS管击穿电压的方
2) surface photovoltage
表面光电压
1.
The results of surface photovoltage spectrum(SPS) indicate that the complex exhibits positive surface photovoltage r.
同时测定了配合物的表面光电压光谱(SPS)和场诱导表面光电压光谱(FISPS)。
2.
The surface photovoltaic properties of porphyrin,mesoporous SBA-15 and SBA-15 with incorporated porphyrin,was studied by surface photovoltage spectra(SPS) and field induced surface photovoltage spectra(FISPS).
用表面光电压谱(SPS)和场诱导表面光电压谱(FISPS)技术对比研究了卟啉和介孔SBA-15及载有卟啉的介孔SBA-15的表面光伏特性。
3.
The surface photovoltage spectroscopy of p-type monocrystal silicon is given, from which the energy of the material s bandgap is determined.
根据半导体能带结构 ,利用静电平衡条件及电荷守衡定律 ,详细讨论了半导体表面光电压的产生原理、测量方法 ,给出了单晶硅的表面光电压谱 ,并由此得出了单晶硅的带隙能
3) SPS
表面光电压
1.
We investigated the photovoltaic properties of series of TiO 2 photocatalysts by means of SPS and found that the thresholds of TiO 2 particles blue shift with their particle sizes decreasing and crystal phases changing from rutile TiO 2 to anatase TiO 2.
由于光催化活性的高低与催化剂的表面性质直接相关 ,表面光电压谱( SPS)是研究固体材料表面物性和界面间电荷转移过程的有利手段 [3] ,其为探讨光催化机理提供了新的手段 。
2.
In this paper, we studied the photovoltaic properties of series of TiO2 photocatalysts by means of SPS.
本文利用表面光电压谱(SPS)方法对系列纳米TiO_2光催化剂进行了光伏响应测试,发现随着TiO_2由锐钛矿型逐渐变成金红石型,其光伏响应带边红移,阈值减小。
4) surface electrostatic voltage
表面静电压
1.
It became clear that by making resin and additives of the topcoat film adequate,the surface electrostatic voltage generated by friction with other materials can be restrained,and the dust sticking can be prevented.
在面涂中加入适当的树脂和添加剂,能抑制与其它材料摩擦所产生的表面静电压,从而防止灰尘的粘附。
5) surface photovoltage spectra
表面光电压谱
1.
The surface photovoltage of the products were studied by surface photovoltage spectra(SPS)in different electric fields.
并研究了这些卟啉化合物在不同外加电场条件下的表面光电压谱(SPS),结果表明,TAPP及其金属配合物都具有良好的光电性能,且其Soret带与Q带的光伏响应强度随外加正电场光伏响应强度的增加而增强,随外加负电场光伏响应强度的增加而减弱,具有P-型半导体的特征。
6) surface photovoltage spectroscopy
表面光电压谱
1.
Quantum well effect and characterization of photoelectric properties of quantum well using surface photovoltage spectroscopy;
量子阱效应及其光电性质的表面光电压谱表征
2.
Experiment of surface photovoltage spectroscopy and detection technique
表面光电压谱及其检测技术实验
3.
XRD,DRS,FT-IR and TEM techniques have been used to characterize the structural and spectral features of the obtained samples,whereas surface photovoltage characteristics of the nanocrystallines are deeply investigated by the surface photovoltage spectroscopy(SPS).
采用偶合的共沉淀法和水热法相结合的方法,制备出ZnFe2O4纳米晶体,并利用DRS、XRD、FT-IR、TEM等技术对其结构和谱学特性进行了研究,并在其基础上利用表面光电压谱(SPS)深入探讨了所制样品的表面光伏特性,研究表明样品具有较窄的禁带宽度,晶型为正尖晶石型结构,大小均匀(7nm),无团聚,表面光伏特性研究显示ZnFe2O4纳米晶体具有明显的表面和量子限域效应,有一定的捕获电子能力,在外加电场下光伏响应变化明显,在正电场下有一个最佳响应值,而当负电场达到一定值时,外电场的光伏响应将占据主导地位。
补充资料：标准操作冲击电压波形(见冲击电压发生器)
标准操作冲击电压波形(见冲击电压发生器)
standard switching impulse voltage waveform
b .oozhun CooZuo ChongJld，onyo boxlng标准操作冲击电压波形(standard switchingimpulse voltage waveform)见冲击电压发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条