1) Si 1-x Ge x/Si heterostructures
GexSi1-x/Si异质结
2) Ge_xSi_(1-x)/Si Heterojunction
Ge_xSi_(1-x)/Si异质结
3) Si_(1-x)Ge_x/Si hetero-junction
Si_(1-x)Ge_x/Si异质结
4) PtSi/Si heterostructure
PtSi/Si异质结
5) GeSi/Si heterojunction
GeSi/Si异质结
1.
GeSi/Si heterojunction single-mode coplanar Bragg reflection grating is an important optoelectronic integrated device in silicon based optoelectronic integrated circuits(OEIC).
GeSi/Si异质结布拉格反射光栅是硅基光电集成领域一种重要的集成光学器件,分析GeSi/Si异质结的传光特性和布拉格条件,通过求解布拉格光栅方程,得出耦合系数和耦合效率。
2.
3μm GeSi/Si heterojunction waveguide grating coupler is approximately designed.
3μm GeSi/Si异质结波导光栅耦合器波导层的厚度、槽形、长度、宽度、周期、槽深等做了近似的设计。
3.
Because the band offset on GeSi/Si heterojunction mainly occurs beween valence bands of GeSi and Si(ΔEv>ΔEc)and the potential well for electron is more shallow than that for hole,it is suitable for hole type RTD.
着重讨论了后两种GeSi/Si基RTD结构;指出GeSi/Si异质结的能带偏差主要发生在二者价带之间(即ΔEv>ΔEc),形成的电子势阱很浅,因此适用于空穴型RTD的研制;n型带内RTD只有通过应力Si或应力GeSi来实现,这种应力型RTD为带内RTD的主要结构;而带间GeSi/SiRITD则将成为更有应用前景的、性能较好的GeSi/SiRTD器件结构。
6) SiGe/Si heterojunction
SiGe/Si异质结
1.
The SiGe technology is applied to the performance improvement of power semiconductor devices and the novel structure of SiGe/Si heterojunction p i n switching power diodes is presented.
将SiGe技术应用于功率半导体器件的特性改进 ,提出了新型SiGe/Si异质结p i n开关功率二极管结构 ,在分析器件结构机理的基础上 ,用Medici模拟了该器件的特性并进行了优化设计 。
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