1) fully depleted CMOS/SOI technology
全耗尽CMOS/SOI工艺
3) fully depleted SOI-MOSFET
全耗尽SOI-MOSFET
1.
A novel approximation of the two-dimensional(2D)potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation.
对垂直于沟道的二维电势分布函数提出了一种新的近似,给出了基于这种近似的杂质浓度呈高斯分布的非均匀掺杂全耗尽SOI-MOSFET的阈值电压解析模型。
4) fully depleted SOI MOSFETs
全耗尽SOI MOSFETs
6) fully-depleted SOI structure
全耗尽SOI结构
补充资料：采气工艺(见天然气开采工艺)
采气工艺(见天然气开采工艺)
gas production technology
，一‘J\匕乙吕天然气开采工艺pro以uetionteehnology)见
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条