1) ionization rate
电离率
1.
A new ionization rate model and the accurate route of the integral of it are achieved,which lead to an analytical result relating the breakdown voltage,impurity concentration and length of drift region to material parameters such as thickness of silicon layer and buried oxide.
在对电场分析的基础上 ,提出了新的电离率模型 ,并求出了电离率积分的准确路径 ,进而得到击穿电压、漂移区掺杂、漂移区长度与SOI硅层厚度、埋氧层厚度的关系 。
2.
All the properties, such as the relation curve of the electron average energy and the electric field strength, ionization rate, current multiplication coefficient, coincided with the experimental data perfectly.
考虑了非晶效应和非晶无序弹性散射的影响，通过ＭｏｎｔｅＣａｒｌｏ方法模拟电子在薄膜电致发光器件（ＴＦＥＬ）的ＳｉＯ２加速层的散射过程，从理论上描述了ＳｉＯ２层的加速作用与电流倍增效应，获得了电子平均能量与场强的关系曲线、电离率、电流倍增因子，与实验结果符合较
3.
Through the study of high harmonics and the ionization rate of hydrogen atoms under the laser pulses, it is found that the ionization rate and high-order harmonics features of the hydrogen atoms are closely related to the laser pulses.
本文采用软核模型,运用二阶劈裂算子算法求解含时薛定谔方程,研究了激光脉冲作用下的氢原子的高次谐波及电离率,发现氢原子的电离率和高次谐波特征都与所加的激光脉冲有密切关系。
2) ionization efficiency
电离效率
1.
Influence of gas s flux on ionization efficiency in dielectric barrier discharge ion source;
气流量对介质阻挡放电离子源电离效率的影响
2.
Based on the absorption cross section for initial state, the ionization efficiency relating to the energy density of excitation and ionization laser is gained.
用准分子泵浦的染料激光研究了铜原子的二步共振电离，求解了非饱和共振电离过程速率方程，由基态共振吸收截面，计算了电离效率与激发及电离激光能量密度之间的关系，得到了饱和激发电离的流量和通量条件，并进行了讨论。
3.
We calculate the absorption cross section for initial state and excitant state, gained that the ionization efficiency relating to the rate of excitation and ionization and the interaction time respectivily, and obtained the conditions on the photon flux and fluence for saturated excitation and ionization.
计算共振吸收截面，给出电离效率分别与激发速率、电离速率以及作用时间的关系，得出饱和激发电离的流量条件和通量条件。
3) ionization rates
电离速率
1.
The ionization rates ofatom and atom ic ions in an intense opticalfieldare sum m arized system atically w ith the quasi static approxim ation, on the basisof tunneling ionization theory in the static electric field.
以静态场隧道电离为基础， 在准静态近似的条件下， 对描述强光场中原子及其各阶离子电离的电离速率进行了较为系统的总结， 纠正了早期对隧道电离的电离速率公式进行讨论并且在后来的计算中被广泛引用的文献［１０］中公式（１３ａ）的错误， 并对部分稀有气体原子及其各阶离子在线偏振、圆偏振强光场中的电离速率及相应的阈值光强进行了比
4) Ionization frequency
电离频率
5) ionization probability
电离概率
1.
Solving time-dependent Schrdinger equation numerically, we investigate the high-order harmonic generation and ionization probability of one-dimensional, two-dimensional and three-dimensional hydrogen atom exposed to intense laser field.
结果表明,在多光子电离区域和过垒电离区域,模型氢原子与真实的氢原子产生的高次谐波和电离概率差别很小;在隧道电离区域,它们产生的高次谐波的平台特征和截止位置相似,电离概率随时间变化的趋势相近,但其数值有明显的差异。
2.
By introducing prodlem of ionization probability of hydrogen atom in the laser-field,we discuss Monte Carlo method for analysing and solving some problem of atomic physics in teaching.
在原子物理教学中 ,通过在强激光场中氢原子电离概率与激光场的电场和磁场关系的讨论 ,介绍 Monte carlo方法在处理原子物理问题的思路和方法。
3.
By introducing Prodlem of ionization probability of hydrogen atom in the lase - field, Itis Showed Monte Cari s methed for analysising and solving ptoblem of atomic Physics in the teaching.
在原子物理教学中，通过在强激光场中氢原子电离概率与激光场的电场和磁场关系的讨论，介绍蒙特卡罗方法在处理原子特理问题的思路和方法。
6) Ionization probability
电离几率
1.
We calculate high order harmonic generation and ionization probability of one-dimensional atom in intense laser field .
本文通过引入非线性空间变换，用伪谱方法数值求解了一维原子在强激光场中的含时Schr(?)dinger方程，研究了一维模型原子在强激光场中的高次谐波和电离几率，其结果与分裂算符方法所得的结果符合得很好。
补充资料：碰撞电离(见电离)
碰撞电离(见电离)
collision ionization
pengZhLjo门g凶。川!碰撞电离(eollision ionization)见电离。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条