1) micromachined polysilicon thin film resistor
微机械多晶硅薄膜电阻
2) Micromechanical silicon membranes
硅微机械薄膜
3) Poly-Si thin films electrode
多晶硅薄膜电极
4) Polysilicon microresistor
多晶硅微电阻
1.
The characteristic of variation of resistance for Polysilicon microresistor with time was measured under constant power operation using Digital Constant Power System(DCPS).
利用数字式恒定功率测试系统（ＤＣＰＳ）对多晶硅微电阻进行恒定直流功率负荷下电阻随时间变化特性的测量实验。
5) microcrystalline silicon thin film
微晶硅薄膜
1.
We also discussed the growth mechanism of the microcrystalline silicon thin films from the aspect .
实验采用等离子体增强化学气相沉积(PECVD)法在玻璃衬底上制备了微晶硅薄膜。
2.
Non-uniformity of microcrystalline silicon thin film deposited by VHF-PECVD along the growth direction was studied.
本文研究了采用VHF PECVD技术制备的微晶硅薄膜的纵向均匀性。
3.
The crystallization affected by annealing studied on microcrystalline silicon thin films fabricated on tantalum;
获得了可用于太阳能电池的微晶硅薄膜的最佳晶化参数。
6) microcrystalline silicon film
微晶硅薄膜
1.
Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity;
微晶硅薄膜的表面粗糙度及其生长机制的X射线掠角反射研究
2.
Influence of silane concentration on microstructural and electrical properties of microcrystalline silicon films;
硅烷浓度对微晶硅薄膜微结构及电学性质的影响
3.
A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-deposited microcrystalline silicon films by VHF-PECVD technique
椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为
补充资料：钽硅电阻薄膜
分子式：
CAS号：
性质：一种由钽和硅的金属间化合物组成的高电阻薄膜。具有耐高温(熔化温度2510℃)、耐腐蚀和高电阻的特点。硅含量在13％～75％(原子)时，电阻率为240~300μΩ·cm。TCR为(-800±40)×10-6/℃，高温稳定性为±0.1％。采用钽硅共溅射法或硅烷与钽在氩气中反应制得。用于制作高温薄膜电阻元器件。
CAS号：
性质：一种由钽和硅的金属间化合物组成的高电阻薄膜。具有耐高温(熔化温度2510℃)、耐腐蚀和高电阻的特点。硅含量在13％～75％(原子)时，电阻率为240~300μΩ·cm。TCR为(-800±40)×10-6/℃，高温稳定性为±0.1％。采用钽硅共溅射法或硅烷与钽在氩气中反应制得。用于制作高温薄膜电阻元器件。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条