1) conduction band offset
导带偏移
1.
05eV and the conduction band offset is ΔE c=0.
05eV,导带偏移ΔEc=0。
2) valence-band offset
价带偏移
1.
A theoretical method for determining the valence-band offset (VBO) at strained alloy type heterojunctions is presented by combining the cluster expansion method and average-bond-energy method.
把原子集团展开方法同平均键能方法相结合，建立了一种研究合金型应变层异质界面价带偏移的方法。
2.
A theoretical determination is reported for the valence-band offset atstrained-layer superlattice interfaces AISb-GaSb,AISb-InSb and GaSb-InSb by combining theaverage bond energy theory and deformation potential method.
采用平均键能理论结合形变势方法对由ＡＩＳｂ，ＧａＳｂ和ＩｎＳｂ所构成的应变超晶格界面在任意应变状态下的价带偏移值进行了确定，并分析了阳离子浅ｄ轨道对价带偏移值的影响。
3) Band offset
带偏移
4) band offset
能带偏移
1.
Variation of band offset during the Si-GaP(110) heterojunction formation;
Si－GaP（110）异质结形成过程中能带偏移的变化
2.
The band offset ratio Qc = 0.
根据实验结果给出了能带偏移比值为Q_c=0。
5) valence band offset
价带偏移
1.
Measurement of the valence band offset in semiconductor heterojunction ZnS_(0.8)Te_(0.2)/GaP by XPS;
用XPS测量ZnS_(0.8)Te_(0.2)/G_aP半导体异质结的价带偏移
2.
From these measurements,the valence band offset is determined to be ΔE v=0.
获得的CdS/CdTe半导体异质结的价带偏移ΔEV=0。
6) spectral sideband offset
光谱边带偏移量
1.
Theoretical spectral sideband offsets are consistent with experimental results very well in the paper.
通过对光纤中传输的孤子波演化及其色散波相互作用的动力学方程分析,详细推导了环形腔非线性偏振旋转(NPR)锁模光纤激光器中色散波与孤子波相互干涉而产生的脉冲光谱边带偏移量的理论计算公式。
补充资料：导带
见固体的能带。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条