1) special resistance
特征电阻
2) Characteristic Resistance R_(os)
特征电阻R_(os)
3) specific on-resistance
特征导通电阻
1.
TrenchMOS was studied to improve the breakdown voltage(BVds),specific on-resistance(Ron) and gate-drain charge density(Qgd),which are the three most important targets of TrenchMOS.
围绕TrenchMOS的击穿电压BVds、特征导通电阻Ron和栅漏电荷Qgd这三个最重要的特性指标,对TrenchMOS进行分析和改进,提出了体内注入TrenchMOS的概念。
4) specific on resistance
特征导通电阻
1.
The mathematical model of the specific on resistance with the regular hexagonal cell power VDMOSFET is introduced in this paper.
介绍了六角形单胞功率VDMOSFET特征导通电阻的数学模型 ,计算了不同漏源击穿电压下 ,各种电阻分量在特征导通电阻中所占的比例 ,分析了阻值随电压变化的原因 。
5) R on
特征导通电阻Ron
6) feature of resistivity response
电阻率响应特征
1.
After studying to the feature of resistivity response of the slope failure, the variety of resistivity during evolution of slope from steady to unsteady was found and the characteristic marks of resistivity response about slope failure was concluded.
利用边界积分方程法对岩石边坡失稳地球物理模型的视电阻率进行了系统数值计算,研究了岩石边坡失稳的电阻率响应特征,揭示了边坡从稳定→失稳演化过程的电阻率变化规律,从而实现了边坡失稳的电阻率响应特征的提取。
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条