1) band offset
能带偏移
1.
Variation of band offset during the Si-GaP(110) heterojunction formation;
Si－GaP（110）异质结形成过程中能带偏移的变化
2.
The band offset ratio Qc = 0.
根据实验结果给出了能带偏移比值为Q_c=0。
2) valence-band offset
价带偏移
1.
A theoretical method for determining the valence-band offset (VBO) at strained alloy type heterojunctions is presented by combining the cluster expansion method and average-bond-energy method.
把原子集团展开方法同平均键能方法相结合，建立了一种研究合金型应变层异质界面价带偏移的方法。
2.
A theoretical determination is reported for the valence-band offset atstrained-layer superlattice interfaces AISb-GaSb,AISb-InSb and GaSb-InSb by combining theaverage bond energy theory and deformation potential method.
采用平均键能理论结合形变势方法对由ＡＩＳｂ，ＧａＳｂ和ＩｎＳｂ所构成的应变超晶格界面在任意应变状态下的价带偏移值进行了确定，并分析了阳离子浅ｄ轨道对价带偏移值的影响。
3) Band offset
带偏移
4) valence band offset
价带偏移
1.
Measurement of the valence band offset in semiconductor heterojunction ZnS_(0.8)Te_(0.2)/GaP by XPS;
用XPS测量ZnS_(0.8)Te_(0.2)/G_aP半导体异质结的价带偏移
2.
From these measurements,the valence band offset is determined to be ΔE v=0.
获得的CdS/CdTe半导体异质结的价带偏移ΔEV=0。
5) conduction band offset
导带偏移
1.
05eV and the conduction band offset is ΔE c=0.
05eV,导带偏移ΔEc=0。
6) Energy band shift
能带漂移
补充资料：间接带隙(见半导体的能带结构)
间接带隙(见半导体的能带结构)
indirect band gap
I’ed接带隙indireet band gap见半导体的能带结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条