In the fabrication of photodiode of monolithic integrated photoreceiver using laser induced diffusion, because the high temperature region is very small, when the intensity distribution of incident laser beam is Gaussian or uniform, the uniformity of the temperature distribution in the diffusion region cannot meet the requirement of uniformity.

Background on which the monolithic integrated silicon photoreceiver developed is presented.

A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.

A novel method for enhancing the sensitivity and speed of CMOS optoelectronic integrated receivers called pre-equalization,which compensates the transferred signal at the input port of a preamplifier,is put forward.