1) p-type quantum well infrared detector
p型量子阱红外探测器
2) n-type QWIPs
n型量子阱红外探测器
3) quantum well infrared detector
量子阱红外探测器
1.
The response peak wavelength of a quantum well infrared detector was predicted directly by measuring Raman spectrum of multiquantum well materials.
通过测量多量子阱材料的Raman散射谱,可以预测出:由该种材料制出的量子阱红外探测器的响应峰值波长。
4) quantum well infrared photodetector
量子阱红外探测器
1.
Achieving the energy level position in quantum wells of quantum well infrared photodetectors (QWIPs) is the base of designing QWIP other parameters.
量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。
2.
Broadband 3—5μm quantum well infrared photodetectors have been successfully grown by molecular beam epitaxy.
采用分子束外延方法在 Ga As衬底上生长了 n型掺杂的应变 In Ga As/Al Ga As多量子阱结构 ,制作成 3— 5μm波段的量子阱红外探测器 ,响应峰值波长 λp=4。
5) long-wavelength quantum well infrared photodetectors
长波量子阱红外探测器
1.
5μm long-wavelength quantum well infrared photodetectors(LW-QWIPs).
5μm峰值响应波长的n型长波量子阱红外探测器设计运用二维金属小球(铜)阵列作光耦合结构。
6) QWIP
量子阱红外探测器
1.
The relationship of the dark current and noise as well as the method to reduce the dark current for AlGaAs/GaAs quantum well infrared photodetector(QWIP)is described.
介绍了 AlGaAs/GaAs 多量子阱红外探测器(QWIP)暗电流与噪声的关系和降低暗电流的途径;基手湿法化学腐蚀工艺制作了300μm×300μm台面单元器件,并用变温液氦杜瓦测试系统在不同温度下对红外探测器暗电流进行了测试并分析。
2.
Through experiment,test,and analysis,we study the surface near-field effect and optical coupling efficiency of very long wavelength quantum well infrared photodetectors (QWIP).
从实验、测试和计算结果出发,运用有限时域差分法(FDTD)和传统的模式扩展(MEM)理论,研究甚长波量子阱红外探测器(QWIP)几种衍射光耦合的表面近场效应和光耦合效率,重点考察QWIP45°面边耦合、光栅耦合QWIP结构、光栅尺寸、工艺条件的变化对QWIP相关性能的影响。
3.
The photocurrent spectra characteristics of the 15μm very long wavelength GaAs/AlGaAs quantum well infrared photo detector(QWIP) have been investigated.
研究了响应波长在 15 μm附近的超长波GaAs AlGaAs量子阱红外探测器在不同外加偏压下的光电流谱特性 。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条