1) separated by implanting oxygen a nd nitrogen
氮氧共注隔离
2) oxygen and nitrogen co-implantation
氧氮共注
1.
SIMON(Separated by Implanting Oxygen and Nitrogen)wafers were fabricated with oxygen and nitrogen co -implantation.
采用氧氮共注的方法制备了氮氧共注隔离SOI(SIMON)圆片,对制备的样品进行了二次离子质谱和透射电镜分析,并对埋层结构与抗辐射性能的机理进行了分析。
3) SIMOX
注氧隔离
1.
Silicon ion implantations was used to improve SIMOX SOI substrate.
采用硅离子注入工艺对注氧隔离(SIMOX)绝缘体上硅(SOI)材料作出改性,分别在改性材料和标准SIMOXSOI材料上制作部分耗尽环型栅CMOS/SOI器件,并采用10keVX射线对其进行了总剂量辐照试验。
2.
Silicon ion implantion was used to improve SIMOX substrate.
采用硅离子注入工艺对注氧隔离(SIMOX)材料进行改性,在改性材料和标准SIMOX材料上制作了部分耗尽环型栅CMOS/SOI反相器,并对其进行60Coγ射线总剂量辐照试验。
3.
The effect of total-dose irradiation with a 10keV X-ray source on separation by implanted oxygen(SIMOX)SOI MOSFET was studied.
研究了以10keV X射线为辐照源对注氧隔离(SIMOX)SOI MOSFET器件进行辐照的总剂量效应。
4) co implantation of nitrogen and oxygen
氮氧共注入
5) SIMQX
注氧隔离SOI
6) separation by implanted oxygen(SIMOX)
注入氧隔离(SIMOX)
补充资料：4-[[2-甲氧基-4-[(4-硝基苯基)偶氮]苯基]偶氮]苯酚
CAS: 19800-42-1
分子式: C19H15N5O4
中文名称: 4-[[2-甲氧基-4-[(4-硝基苯基)偶氮]苯基]偶氮]苯酚
英文名称: 4-[[2-methoxy-4-[(4-nitrophenyl)azo]phenyl]azo]-Phenol
4-[[2-Methoxy-4-[(4-nitrophenyl)azo]phenyl]azo]phenol
4-[[4-[(p-Nitrophenyl)azo]-2-methoxyphenyl] azo]phenol
4-[[2-methoxy-4-[(4-nitrophenyl)azo]phenyl]azo]-pheno
分子式: C19H15N5O4
中文名称: 4-[[2-甲氧基-4-[(4-硝基苯基)偶氮]苯基]偶氮]苯酚
英文名称: 4-[[2-methoxy-4-[(4-nitrophenyl)azo]phenyl]azo]-Phenol
4-[[2-Methoxy-4-[(4-nitrophenyl)azo]phenyl]azo]phenol
4-[[4-[(p-Nitrophenyl)azo]-2-methoxyphenyl] azo]phenol
4-[[2-methoxy-4-[(4-nitrophenyl)azo]phenyl]azo]-pheno
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条