1) reverse bias voltage
反向偏置电压
1.
To establish this parameter exactly, many facet s must be considered synthetically such as p-i-n diode power capability, forma t of circuit, reverse bias voltage, frequency and format of the RF signal, match ing of the system, working circumstance, reliability, etc.
PIN管控制电路的功率容量是一个重要的电路参数,必须全面考虑PIN管本身的功率容量和电路结构形式、施加的反向偏置电压、射频信号的频率和形式以及电路在系统中的匹配状况、工作环境和可靠性要求等各项因素综合确定。
2) Back-biased.
反馈偏压的，反向偏置的。
3) reverse biased current
反向偏置电流
4) bias voltage
偏置电压
1.
Experimental Study on Influence of Interference and Bias Voltage on Detective Signal of Spark Plug;
干扰及偏置电压对火花塞检测信号影响的试验研究
2.
The influences of the bias voltage and hydrostatic pressure on FE/AFE and AFE/PE phase transition and transition temperature of these PLZST ceramics obtained by measuring the relation between the relative dielectric constants and loss and various parameters of samples.
通过测定样品的相对介电常数及损耗与各种参量的关系,得到了等静压力及偏置电压对反铁电体铁电/反铁电相变及反铁电/顺电(PE)相变温度影响的规律。
3.
The bias voltage Vp was discussed.
直流偏置电压V_p可消除系统倍频振动,为后续检测电路设计提供便利。
5) biased voltage
偏置电压
1.
The uniformity and conformity of the oxidation lines of Si obtained by AFM (atom force microscope) tip induced oxidation ofdifferent biased voltages and scanning speeds are studied.
研究了在不同的偏置电压和扫描速度下加工的Si氧化线的一致性和均匀性,得到了加工高质量的Si氧化线的实验条件为:偏置电压8V,扫描速度1 μm/s。
2.
Ti oxidation lines with 5 μm length were fabricated at temperature of 20 ℃,relative humidity of 30 %,oxygen concentration of 20 %,and different biased voltages and scanning speeds.
偏置电压和扫描速度是AFM阳极氧化加工Ti纳米氧化线的决定因素。
6) reverse biased junction
反向偏置结
补充资料：标准操作冲击电压波形(见冲击电压发生器)
标准操作冲击电压波形(见冲击电压发生器)
standard switching impulse voltage waveform
b .oozhun CooZuo ChongJld，onyo boxlng标准操作冲击电压波形(standard switchingimpulse voltage waveform)见冲击电压发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条