1) ZnO-based thin film
氧化锌基薄膜
2) ZnO thin films
氧化锌薄膜
1.
In this paper, photoluminescence of ZnO thin films, which were deposited by reactive r.
利用直流射频磁控溅射制备了氧化锌薄膜 ,测量了不同温度下的氧化锌薄膜的光致发光 。
2.
The ZnO thin films are fabricated by electrodeposition on n-type InP wafers at constant potential.
采用电化学沉积方法在n型InP(100)(1016)衬底上制备了氧化锌薄膜。
3.
The vacuum evaporation was used for the deposition of Zinc precursor layers,and ZnO thin films were prepared by oxidizing the precursor in the air in the post treatment of annealing processing at different temperatures.
采用真空蒸发镀膜的方法分别在玻璃和硅片衬底上沉积金属锌前驱体,再在空气中通过不同温度的退火氧化处理制得氧化锌薄膜,主要研究了不同退火温度对氧化锌薄膜光电特性的影响。
3) ZnO film
氧化锌薄膜
1.
Preparation and mechanism of p-type ZnO films formed by modified ion beam enhanced deposition method;
离子束增强沉积制备p型氧化锌薄膜及其机理研究
2.
So it could be used as substrate materials of ZnO films.
ZnWO4单晶的a晶面与氧化锌c晶面晶格匹配很好,是制备氧化锌薄膜的优良衬底。
3.
ZnO films were prepared by pulsed laser deposition on crystal silicon substrate.
在单晶硅衬底上用激光脉冲沉积方法制备了氧化锌薄膜,研究了衬底温度对薄膜结构、形貌和发光性能的影响。
4) ZnO thin film
氧化锌薄膜
1.
Al-doped ZnO thin films were fabricated on glass substrates by solgel method.
采用溶胶-凝胶工艺在普通玻璃片上制备了掺铝氧化锌薄膜。
2.
N-doped ZnO thin films are grown by plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire (α-Al_2O_3) using NO as oxygen source and nitrogen dopant.
用等离子辅助分子束外延 (P MBE)的方法 ,在蓝宝石c 平面上外延生长了p型氧化锌薄膜。
3.
ZnO thin film was deposited on nucleation side of freestanding diamond film by RF reactive magnetron sputtering.
采用热丝化学气相沉积(CVD)法制备了自支撑金刚石膜,再通过射频磁控溅射法沉积氧化锌薄膜在自支撑金刚石膜上。
5) zinc oxide film
氧化锌薄膜
1.
A layer of zinc acetate was sprayed on the surface of glass, and then a zinc oxide film as a semiconductor was formed by pyrolysis.
扩展一种和玻璃基体结合力高的化学镀铜技术 ,它在玻璃表面上喷雾覆盖一层醋酸锌 ,然后热解形成半导体氧化锌薄膜 。
6) ZnO films
氧化锌薄膜
1.
ZnO films were prepared on glass substrates by a sol-gel spin-coating method from 3 to 9 layers.
用sol-gel法在玻璃载玻片上旋涂3~9层制备氧化锌薄膜。
2.
In the experiment, reflection spectra of ZnO films, which deposited on Si substrate, were measured.
实验结果表明,氧化锌薄膜在可见光范围内的折射率近似为一常数3。
3.
Using DC reaction sputtering, ZnO films were deposited on Si and quartz substrates, respectively.
采用正入射的方法研究了生长在硅基片上的氧化锌薄膜的反射光谱,测量出氧化锌薄膜的光学吸收边在370nm,所对应的能量值为3 35eV。
补充资料：钽基介电薄膜
分子式：
CAS号：
性质：一种以氧化钽为主成分的介电薄膜。有纯氧化钽膜、掺杂钽基薄膜(掺氮、铝或硅)和钽基复合薄膜(如氧化钽-氧化硅膜、氧化钽-氧化铅膜等)三种。采用阳极氧化法、反应溅射法、等离子阳极氧化法等制取。氧化钽是一种优良的介电薄膜，介电常数为25。掺杂膜具有高的介电性能。复合膜具有高的阴极击穿电压。用于制作用在集成电路中的薄膜容器。
CAS号：
性质：一种以氧化钽为主成分的介电薄膜。有纯氧化钽膜、掺杂钽基薄膜(掺氮、铝或硅)和钽基复合薄膜(如氧化钽-氧化硅膜、氧化钽-氧化铅膜等)三种。采用阳极氧化法、反应溅射法、等离子阳极氧化法等制取。氧化钽是一种优良的介电薄膜，介电常数为25。掺杂膜具有高的介电性能。复合膜具有高的阴极击穿电压。用于制作用在集成电路中的薄膜容器。
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参考词条