1) resistive gate
电阻栅
1.
The n-InGaP/p-GaAs/n-GaAs negative differential resistance heterojunction bipolar transistor with resistive gate structure (RGNDRHBT) is designed and fabricated successfully.
设计并研制成功了具有电阻栅结构的n-InGaP/p-GaAs/n-GaAs负阻异质结双极晶体管。
2) gate resistance
栅电阻
1.
The paper presents the equivalent model and components of gate resistance Rg and gate capacitance Cgs of DMOSFET, the C-V curve of metal insulator semiconductor structure and testing methods and equipments of gate resistance Rg.
讲述了双扩散型MOSFET栅电阻Rg和栅电容Cgs的等效模型和构成,介绍了金属绝缘半导体结构C-V曲线及栅电阻Rg的测试方法和设备。
3) Gate resistance Rg
栅电阻Rg
1.
For VDMOSFET, the switching performance is quite important for its application and mainly depends on the product of the equivalent Gate resistance Rg between Gate and Source and input capacitance Ciss.
垂直双扩散MOSFET(VDMOSFET)是当今功率MOSFET的一种主要类型,其开关性能在应用中是非常重要的,主要取决于栅极和源极间的等效电阻Rg(简称栅电阻Rg)和输入电容Ciss的乘积。
4) grid leak resistor
栅漏电阻
5) grid bias resistance
栅偏电阻
6) Grid resistance
栅极电阻
1.
Grid resistance affects the switch on-off time and the wear and tear of switch,etc.
栅极电阻影响IGBT的开关时间、开关损耗等。
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条