1) room temperature photoluminescence
室温光致发光
1.
By fitting the room temperature photoluminescence peak wavelength of the highly strained InGaAs/GaAs quantum well,we obtain the diffusion coefficients and the activation energy of In-Ga atoms interdiffusion (0.
本文采用假设InGaAs/GaAs量子阱中的InGa原子扩散为误差函数扩散并解任意形状量子阱的薛定谔方程的方法,对不同退火温度下InGaAs/GaAs量子阱室温光致发光峰值波长拟合,得到了In原子在高应变InGaAs/GaAs量子阱中的扩散系数以及扩散激活能(0。
2) Photoluminescence (PL) spectra at room temperature
室温光致发光谱
3) LTPL
低温光致发光
1.
In this article, low temperature photoluminescence (LTPL) measurements have been performed on neutron irradiated and post-annealed n-type 6H-SiC, the annealing temperature was from 350℃ to 1650℃.
本文用低温光致发光(LTPL)技术对经中子辐照的N型6H-SiC在350℃-1650℃温度范围的退火行为进行了研究。
2.
In this thesis, irradiation-induced defects in 6H-SiC samples after neutron andelectron irradiation having different energies have been studied using lowtemperature photoluminescence (LTPL) and deep level transient spectroscopy (DLTS)techniques.
本文用低温光致发光谱(PL)和深能级瞬态谱(DLTS)技术对中子和不同能量电子辐照后6H-SiC外延层的辐照诱生缺陷进行了研究，研究了不同辐照能量下辐照诱生缺陷的产生以及它们的退火行为，分析了它们在退火过程中的迁移、解体和重新组合等演变过程。
4) Low-temperature photoluminescence
低温光致发光谱
5) photoluminescent thermometer
光致发光温度计
6) temperature dependent PL measurement
变温光致发光谱
1.
from temperature dependent PL measurement spectra we determine the binding energy of the acceptors to be 131 meV at 81 K, suggests that it is a Sb_(Zn)-2V_(Zn) complex with activation energy of about160 meV.
XRD和拉曼谱表明Sb~(3+)代替Zn~(2+)进入ZnO的格位,随着浓度的增加纳米粒子半径变小;通过变温光致发光谱,计算出在81 K时受主束缚能为131 meV,认为形成了Sb_(Zn)-2V_(Zn)复合体,理论计算其受主束缚能为160 meV。
补充资料：场致发光材料(见电致发光材料)
场致发光材料(见电致发光材料)
electroluminescent material
见场致发光材料eleetrolumineseent material 电致发光材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条