1) Global planarization
全局平坦化
1.
After four kinds of planar methods are compared,as unique global planarization method,the development,application and prospects of chemical mechanical polishing are .
在比较了IC工艺中的四种平坦化技术基础上,重点综述了唯一可以实现全局平坦化的化学机械抛光(CMP)方法的发展、应用及展望。
2) global planarization
全局平面化
1.
Now, CMP has been regarded as the unique technology to meet the need of global planarization.
随着集成电路工业的发展，芯片集成度不断提高，特征尺寸不断减小，为了改善芯片电学性质，需要采用多层金属布线结构，导致芯片表面要求达到全局平面化，而传统的抛光工艺已不能满足这一要求，现在CMP工艺已被人们认为是唯一可实现全局平面化的工艺。
3) locally flat
局部平坦的
4) planarization
平坦化
1.
Performance and analysis of the planarization technologyin IC manufacture;
IC制造中平坦化技术的性能与分析
2.
A Planarization Technique for Fully Dielectrically Isolated SOI IC s;
一种适合SOI全介质隔离电路的平坦化技术
3.
Polyimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bipolar transistors(SHBTS)are developed.
成功地将Polyimide钝化平坦化工艺应用于InP/InGaAs单异质结晶体管制作工艺中。
5) flatness
[英]['flætnis] [美]['flætnɪs]
平坦化
1.
In the experiment,aiming at the silicon wafer CMP flatness,some investigations on the effects of the pressure,rotation,polishing pad,slurry on the CMP were carried out.
针对硅晶圆CMP平坦性问题,系统地考察了压力、转速、抛光垫、浆料、温度等因素对硅晶圆平坦化速率的影响,从中找到它们之间的优化参数,减少CMP工艺中的表面划伤、抛光雾、金属离子沾污,清除残余颗粒,保证硅晶圆的平坦化质量。
2.
In preparation for the challenges of "flatness",governments must create a market environment with sound and rational rules of the game.
全球化时代,世界出现“平坦化”趋势。
3.
In the experiment,aiming at the silicon wafer CMP flatness,some investigations on the effects of the pressure,rotation,polishing pad,slurry on the CMP were carried out.
针对硅晶圆 CMP 平坦性问题,系统地考察了压力、转速、抛光垫、浆料、温度等因素对硅晶圆平坦化速率的影响,从中找到它们之间的优化参数,减少 CMP 工艺中的表面划伤、抛光雾、金属粒子沾污,清除残余颗粒,保证硅晶圆的平坦化质量。
6) plateau curing
平坦硫化
补充资料：公理化方法(见公理化和形式化)
公理化方法(见公理化和形式化)
axiomatical method
gongllbuafangfa公理化方法化和形式化。(axiomatieal method)见公理
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条