1) current Gainβ
电流增益β
2) DC gain β
直流增益β
1.
The results showed that the SiGe HBTs on the SOI substrate with DC gain β higher than 300 were obtained,but devices on the SOI substrate shown higher self-heating effect than devices on n+ substrate.
性能测试表明,在SOI衬底上获得了直流增益β大于300的SiGeHBT,但SOI衬底上的SiGeHBT表现出较严重的自热效应。
3) current gain
电流增益
1.
SiGe/Si HBT with a current gain of 26000 in the temperature of 77K;
77K下电流增益为2.6万的SiGe/Si HBT
2.
Analysis of Current Gain in Al_(0.3) Ga_(0.22) In_(0.48) P/GaAs HBT at High Temperature\+*;
高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析
3.
In Dartington transistor,the current gain and the distribution of the collectorcurrents of transistors in each stage are changed due to the introduction of stable resist-ance.
在达林顿晶体管中,由于稳定电阻的引入,使电流增益和各级管间集电极电流分配关系发生了变化。
4) current loop gain
电流环增益
5) β gain
β增益
1.
Thesis introduces a novel methodology to apply β gain assist networked control systems.
文中提出了一种基于β增益的网络控制系统时延补偿方案,该方案能够根据当前网络时延和阻塞等状况适时的修改现有的控制器的输出,使得现有的控制器能够适应于不同网络状况下的网络控制系统,从而达到时延补偿的目的。
6) DC current gain
直流电流增益
1.
The DC current gain of the transistor with the emitter long edge parallel to orientation is greater than that of parallel to .
在对 In Ga P/ Ga As HBT特性的研究中发现 ,发射极长边与主对准边垂直 ([0 1 1 ]方向 )和平行 ([0 1 1 ]方向 )放置时 ,其直流电流增益和截止频率是不同的 。
补充资料：标准冲击电流波形(见冲击电流发生器)
标准冲击电流波形(见冲击电流发生器)
standard impulse current wave form
blaozhun ehonglld}0n4一u box]ng标准冲击电流波形(standard impulse currentwave form)见冲击电流发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条