1) device physics
器件物理
1.
In order to model the MOSFET channel current,a semi-empirical channel current equation has to be used in the present surface potential based charge-sheet models,that lead to device physics inconsistency between the channel current expression and channel charge equ.
相对于以基本的MOSFET器件物理为基础的Pao-Sah模型结果,大多数片电荷模型在不同的工作区域内都会出现不同程度的反型层电荷计算误差。
2) physical mechanisms
器件物理机理
3) nanoscale physics and devices
纳米物理与器件
1.
Applications of micro/nanofabrication in nanoscale physics and devices;
微纳米加工技术在纳米物理与器件研究中的应用
4) Physics of Semiconductor Devices
《半导体器件物理基础》
1.
On Teaching of Physics of Semiconductor Devices;
《半导体器件物理基础》课程教学的思考
补充资料：物理学危机(见物理学革命)
物理学危机(见物理学革命)
crisis in physics
谜幂咪革命奋一(c ris始inphysics)见漪理学
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条