Comparison with conventional long-channel device is made,it is pointed out that since the short-channel effects of SCE and DIBL should be overcome by special process,the effects can be depressed by Halo injection to form higher doping areas at two sides,and it becomes the completely concerned structure.

The model includes the substrate bias effect, the short channel effect and the relation between these two effects.

Based on the hydrodynamic energy transport model, the short channel effect immunity in the deep sub micron grooved gate PMOSFET is studied together with the influences of substrate and channel doping density on that effect immunity.

I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully investigated.

Computer simulation analysis of short-channel effects and corner effectsfor deep sub-micron triple-gate FinFETs

A new kind of sub-50 nm N channel double gate MOS nanotransistors was simulated by solving coupling Poisson-Schrdinger equations in a self-consistent way with a finite element method,and a systematic simulation-based study was presented on the short-channel effects.

In this paper the methodology of modeling and characterization of modern MOSFET ,with emphasis on short-channel effects of deep-submicorns devices up to 0.

SOI groove gate MOS devices, which constrain the Short-channel effects and resist the Hot-carrier effects effectively in Sub-micron field, compensate the defect of bad driving capability and sub-threshold characteristics in Bulk Groove gate devices.