3) thin film was deposited by ultrahigh vacuum chemical vapour deposition(UHVCVD) system,and the dependences of the temperature coefficient of resistance and electrical conductivity of the film on B-ion implantation dose and annealing processes have been investigated.

Growth of poly-Si_(1-x)Ge_x thin film on SiO_2 substrate with a advanced thin filmpreparation equipment------UHVCVD has been researched in this paper.

STRUCTURE AND POTENTIAL ENERGY FUNCTION INVESTIGATION ON UH AND UH_2 MOLECULES;