1) heterostructure design for current-collapse-free HFET
无电流崩塌设计
2) current collapse
电流崩塌
1.
Mechanism study of the surface passivation effect on current collapse characteristics of AlGaN/GaN HEMTs;
AlGaN/GaN HEMTs表面钝化抑制电流崩塌的机理研究(英文)
2.
Research on the current collapse in AlGaN/GaN high-electron-mobility transistors through the inverse piezoelectric polarization model;
用逆压电极化模型对AlGaN/GaN高电子迁移率晶体管电流崩塌现象的研究
3.
Relation between breakdown voltage and current collapse in GaN FP-HEMTs;
GaN FP-HEMTs中击穿电压与电流崩塌的关系
3) current collapse effect
电流崩塌效应
1.
It has been demonstrated that current collapse effect was suppressed effectively in doped structures.
对不同掺杂浓度AlGaN/GaN HEMTs施加直流偏置应力,研究掺杂AlGaN/GaN HEMTs电流崩塌效应。
2.
Under some DC bias stress,the degree of drain current collapse of AlGaN/GaN HEMTs with an AlN insert layer is less prominent than that with no AlN insert layer,indicating that an AlN insert layer can inhibit current collapse effectively.
从测试结果看,无AlN插入层的AlGaN/GaNHEMTs有更显著的电流崩塌程度,表明AlN插入层对电流崩塌效应有显著的抑制作用。
4) current collapse
电流崩塌效应
1.
Pulse width influences less on current collapse.
基于实验结果的理论分析认为,电子从栅极注入到栅漏之间并被表面态所俘获,在沟道中形成增加的耗尽层,使得沟道二维电子气浓度减小,从而导致形成电流崩塌效应的主要原因之一。
2.
2% induced by bias stress, and if the bias stress is long and large enough, current collapses are approximately even in the same gate voltage and different bias conditions.
研究表明,栅- 漏间表面态捕获的电子使得表面电势发生变化,引起沟道中二维电子气浓度降低,从而导致电流崩塌效应的产生。
3.
A review on the progress and resear ch of current collapse of AlGaN/GaN HEMTs is presented.
简要回顾了 Al Ga N/Ga N HEMT器件电流崩塌效应研究的进展 ,着重阐述了虚栅模型、应力模型等几种解释电流崩塌效应形成机理的模型和器件钝化、生长盖帽层等减小电流崩塌效应的措施。
5) dynamic current collapse model
动态电流崩塌模型
6) landslide-mass flow deposit
崩塌-块体流堆积
补充资料：标准冲击电流波形(见冲击电流发生器)
标准冲击电流波形(见冲击电流发生器)
standard impulse current wave form
blaozhun ehonglld}0n4一u box]ng标准冲击电流波形(standard impulse currentwave form)见冲击电流发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条