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1)  double-gate impure-base
双栅不纯基
2)  double-gate impure-base theory
双栅不纯基理论
3)  double-gate pure-base
双栅纯基
4)  single-gate impure-base
单栅不纯基
5)  biholomorphic invariant
双全纯不变量
1.
By means of holomorphic automorphic map to compute the determinant of Bergman metic matrix detT for domains Y_(II),which are Cartan-Hartogs domains of the second type,in explicit formulas and the biholomorphic invariant J_(Y_(II)) for the domains Y_(II) are obtained.
利用全纯自同构映射,求出了第二类Cartan-Hartogs域YII上Bergman度量矩阵行列式detT(W,Z;W,Z)的显表达式,从而得到YII上的双全纯不变量JYII。
2.
In this paper we obtain the biholomorphic invariant J Y Ⅲ concerning Bergman Kernel function on Cartan-Hartogs domain of the third type and discuss the limit of J Y Ⅲ when points (W,Z)→(W 0,Z 0)∈Y Ⅲ.
研究了第三类Cartan Hartogs域YⅢ 上一类与Bergman核函数有关的双全纯不变量JYⅢ ,以及当点 (W ,Z)趋于边界YⅢ 时JYⅢ 的极限 。
3.
As an aplication,the formulas are used to research the boundary bdehavior for biholomorphic invariant J Y Ⅳ ,which is with respect to the Bergman kernel.
作为应用又研究了一类与 Bergman核函数有关的双全纯不变量 JY 的边界性质 。
6)  double-gate
双栅
1.
Transient characteristic analysis of a CMOS circuit based on a double-gate dual-strained channel SOI MOSFET with the effective gate length scaling down to 25nm is presented.
在提出双栅双应变沟道全耗尽SOI MOSFET新结构的基础上,模拟了沟道长度为25nm时基于新结构的CMOS瞬态特性。
2.
A novel fully-depleted SOI device structure with a double-gate and dual-strained channel is presented.
提出了一种全新的器件结构——双栅双应变沟道全耗尽SOIMOSFETs,模拟了沟道长度为25nm时器件的电学特性。
3.
The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors.
解释近来双栅纳米硅MOS晶体管实验特性——两条电子和两条空穴表面沟道,同时并存。
补充资料:(Z)-2-丁烯酸双[2,2-双[(2-丙烯氧基)甲基]丁基]酯
CAS:70636-59-8
中文名称:(Z)-2-丁烯酸双[2,2-双[(2-丙烯氧基)甲基]丁基]酯
英文名称:2-Butenoic acid (Z)-, bis-[2,2-bis-[(2-propenyloxy) methyl] butyl] ester
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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