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1)  collector current bias
集电极偏置电流
2)  collector bias
集电极偏置
3)  collector-base bias circuit
集电极基极偏置电路
4)  deflection electrode
偏置电极
5)  bias current
偏置电流
1.
Under normal operation state,the load of the three-phase full-controlled rectifier is an impedance;under fault state,the load becomes an impedance plus even frequency reverse electromotive force due to the even frequency reverse electromotive force generated in the FCL dc bias coil,the dc bias current includes the dc component and even.
为提高偏置电流系统的控制精度,设计了一种运用模糊PID在线修改控制器参数的新型偏置电流控制系统。
2.
The effect of bias current on the performanc e of active magnetic beari ng(AMB)is studied in this paper.
研究了电磁轴承偏置电流对其性能的影响 ,给出了电磁轴承电磁设计的基本原则和基本步骤 ,将电磁轴承的设计分成两个步骤 ,即不考虑铁心磁阻的初始设计和考虑铁心磁阻的校算设计 。
3.
The paper carried out the reasoning of the formula which implies the relationship between optical modulation depth and the input level of a optical transmitter and the formula implied between single channel modulation depth and bestir level & bias current.
推导出光调制度与光发射机输入电平的关系算式、激励电平与激光器偏置电流和单频道调制度的关系算式,分析系统频道数变化对调制度恒定型光发射机激励电平的影响规律,同时分析常见光发射机标称输入电平的标示方式、结构特点和具体应用调试方法。
6)  collector current
集电极电流
1.
With this method in mind,the features of the collector current are analyzed when resonating circuit or resistor is loaded.
以此方式分析了负载为谐振回路及负载为纯电阻下集电极电流的特点。
2.
The PSpice model of a Darlington transistor is extracted and optimized in room temperature,some typical electrical characteristics of NPN Darlington pair based on Chip TIP120 are simulated,such as current gain(hFE),collector current vs.
达林顿晶体管的PSpice建模优化是在室温下完成的,一些典型的NPN达林顿对的电子特征是基于芯片TIP120仿真的,比如在不同的集电极-射极饱和电压状态下的电流增益(hFE),集电极电流vs,输入级电流,以及集电极-射极饱和电压和集电极电流之间的关系。
补充资料:标准冲击电流波形(见冲击电流发生器)


标准冲击电流波形(见冲击电流发生器)
standard impulse current wave form

  blaozhun ehonglld}0n4一u box]ng标准冲击电流波形(standard impulse currentwave form)见冲击电流发生器。
  
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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