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1)  two-transistor bandgap structure
两管带隙结构
2)  Band gap structure
带隙结构
1.
Study of two dimensional photonic band gap structure;
二维光子晶体带隙结构的研究
2.
Change of band gap structure of 1-D photonic crystal of periodic positive-negative index structure at angular incidence;
含正负介质光子晶体在角度入射情况下的带隙结构变化
3.
With the boundary conditions satisfied by the electromagnetic fields in the interface between the crystal and the clad,the characteristic equation to describe the band gap structure is deduced.
根据电磁场在包层边界应满足的基本关系,建立了描述其带隙结构的特征方程,给出了特征方程迭代求解的算法描述,为电磁波传播特性数值仿真分析提供了理论基础。
3)  band-gap structure
带隙结构
1.
Computations of one-dimensional photonic crystal band-gap structures using Rouard's method;
基于Rouard方法的一维光子晶体带隙结构计算
2.
The authors proposed a new model of one-dimensional photonic crystal composed of alternately arranged RHM and LHM layers, calculated numerically the transmission spectra of the model with the transfer matrix method, and theoretically analyzed characteristics of the band-gap structure.
提出了用正、负折射率介质层交替排列构成的一维光子晶体模型,并且用传输矩阵法计算了该模型的透射谱,从理论上分析了其带隙结构。
3.
Comparing with the periodical structure, its band-gap structure has some characteristics.
其带隙结构与不包含缺陷结构的带隙结构相比有明显的不同,系统的透射率不仅与掺杂或替换的介质种类和层数有关,而且与介质的厚度有关。
4)  photonic band gap
带隙结构
1.
In this article, the first Brillouin zone (BZ) and the method of calculating the photonic band gaps of two-dimensional monoclinic lattice photonic crystal are discussed.
二维单斜点阵光子晶体在光学聚焦器件及光子晶体波导中有重要的应用价值,详细讨论了二维单斜点阵光子晶体的第一布里渊区及带隙计算,并与常规方法计算得出的二维正三角形晶格光子晶体的带隙结构进行了比较。
5)  band structure
带隙结构
1.
We caculated the band structure of composite-photonic-crystal and composite photonic crystals.
选用时域有限分方法(FDTD)分析光子晶体带隙结构。
6)  bandgap structure
带隙结构
1.
Quasi-static bandgap structure was put forward,and its bandgap was calculated using Finite-difference Time-domain (FDTD) and Pulse Width Modulation (PMW).
建立了弹性激波调制一维光子晶体的物理模型;提出了准静态带隙结构的概念,并采用FDTD和平面波展开法计算了其光子带隙;通过数值计算和微扰分析,发现该频率转换是一个量化累积过程,并对该频率转换效应及其量化累积现象提出一种基于光子-声子相互作用和表面衰减模的解释,同时,分析了该频率转换效应的特性。
补充资料:间接带隙(见半导体的能带结构)


间接带隙(见半导体的能带结构)
indirect band gap

  I’ed接带隙indireet band gap见半导体的能带结构。
  
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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