1) gate recess etching
栅挖槽
1.
35 μm gate-length GaAs power PHEMT has been fabricated by improving the processes of device structure and gate recess etching.
35μm的GaAs功率PHEMT,其中对器件结构、栅挖槽等工艺进行了改进。
2) channelling
[英]['tʃænliŋ] [美]['tʃænlɪŋ]
挖槽
1.
Hydraulic generalized model experiment on channelling of Yamenkou navigation course;
崖门口航道挖槽水力学概化模型试验
3) trench gate
槽栅
1.
In this article, a fully self aligned trench gate IGBTs(Insulated Gate Bipolar Transistors) with process simplification scheme is designed and fabricated with total of two masks which is the least of IGBT fabrication today.
本文设计了一种全自对准的槽栅 IGBT(绝缘栅双极晶体管 )结构 ,其工艺简单 ,全套工艺只有两张光刻版 ,是现有 IGBT工艺中最少的 ,而且两次光刻之间没有套刻关系 ,避免了套刻误差 ,提高了工艺成品率。
4) chamfer machining
挖槽加工
1.
The article had expounded chamfer machining by cycle programming and sword programming setting out tool offset velative, and it has specified direction sens to practive.
对用循环编程和用刀补编程并设定刀补值实现挖槽加工进行了论述,对实际生产有一定的指导意义。
5) clear chamfer
明挖槽
1.
Application of clear chamfer substitutes the receiving well in construction;
明挖槽代替接收井在施工中的应用
6) trial tunnel
试挖槽
1.
In the light of the characteristics of silt motion, methods such as observation through trial tunnel, model experiment, and sand tracing test, etc.
针对粉沙运动的特性,采用试挖槽观测、模型试验、示踪沙试验等方法进行了研究,并对航道开挖后的泥沙回淤进行了预测。
补充资料：暗挖法
见隧道及地下工程施工方法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条