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1)  Smith-Purcell FEL
Smith-Purcell自由电子激光
1.
The open column slow-wave grating structure, which is a novel type slow-wave system for Smith-Purcell FEL and relativistic TWT, was presented.
研究了一种新的开放式圆柱光栅周期结构,该结构可以作为Smith-Purcell自由电子激光和相对论行波管中的慢波结构。
2)  FEL
自由电子激光
1.
Optimization of Hefei Soft X-Ray FEL Photocathode Injector;
合肥软X射线波段自由电子激光注入器模拟优化
2.
The Synchronization System of Storage Ring FEL Coherent Harmonic Experiment;
储存环自由电子激光相干谐波实验的同步系统
3.
Preliminary Design of Compact FEL Terahertz Radiation Source;
基于自由电子激光的小型太赫兹源初步设计
3)  Free-Electron Laser
自由电子激光
1.
Measuring Bunching of Electron Beam in Free-Electron Laser by Coherent Transit Radiation;
利用相干渡越辐射测量自由电子激光的群聚
2.
Using energy-chirped electron beam free-electron laser to amplifiy chirped pulse;
能量啁啾电子束自由电子激光放大啁啾脉冲
3.
In this paper, we present a general theory of the double-undulator free-electron laser, in which an additional undulator with period close to the beam electron betatron oscillation period in the main undulator is introduced.
给出了双波荡器自由电子激光器的通用理论 。
4)  FEL
自由电子激光(FEL)
5)  free electron laser
自由电子激光
1.
Go further into the primary theory of free electron laser;
自由电子激光的初级理论探讨
2.
spontaneous emission of free electron laser with an electrostatic wiggler;
静电摇摆器自由电子激光的自发辐射
3.
The efficiency enhancement mechanism of far infrared free electron laser(FIR FEL) with a reverse tapering waveguide is theoretically investigated.
提出使用渐变间隙的矩形波导提高远红外自由电子激光器效率的新思想。
6)  free electron laser
自由电子激光器
1.
Imaging theory and development of THz free electron lasers;
太赫兹自由电子激光器的成像原理及进展
2.
A Raman free electron laser(FEL) beam with a pseudospark discharge has been simulated numerically by nonlinear model.
采用非线性模型对拉曼自由电子激光器进行数值模拟 ,发现虚火花束源自由电子激光器可以去掉导引磁场 ,用小周期摇摆器 ,实现器件的小型化和高功率。
3.
This paper reports an analysis of problem about impedance match of pseudospark e-beam source of free electron laser and the experiment results on compact device without pulse transmission line.
分析了自由电子激光器的小型虚火花电子束源在去掉脉冲传输线的情况下的阻抗匹配问题 ,并对此进行放电实验。
补充资料:自由电子
金属导体中的自由电荷。金属原子的外层电子(价电子)脱离原子核束缚后而成为自由电子。铜的自由电子密度为85×1028米-3。各种金属的自由电子密度有相同的数量级。n型半导体中的多数载流子是自由电子。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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