1) ultraviolet photoluminescence
紫外光致发光
1.
Results indicate that the films contained Si nanocrystals and AlOx;ultraviolet photoluminescence peaks with energy around 3.
42 eV的较强紫外光致发光,其发光强度随退火温度和Al含量的变化而变化。
2.
A series of amorphous SiO xC yH z films were synthesized by benzene thermal technique at three different growth temperatures of 200 ℃,300 ℃,400 ℃ respectively and intense ultraviolet photoluminescence was observed at room temperature.
用苯热合成法分别在２００ ℃、３００ ℃、４００ ℃下制得非晶ＳｉＯｘＣｙＨｚ 膜，在室温下观测到强的紫外光致发光，典型样品的发光强度可与多孔硅相比。
2) UV Photoluminescence spectra
紫外光致发光谱
3) ultraviolet emission
紫外发光
1.
A strong ultraviolet emission PL from the films has been observed at room temperature.
实验结果表明所制备的样品为纳米晶态SiC,并通过计算得到验证,对所制备样品进行光致发光特性测试,观察到其在室温下有较强的紫外发光。
5) middle ultra-violet emission
中紫外发光
6) ultraviolet photoluminescence peak
紫外发光峰
补充资料：场致发光材料(见电致发光材料)
场致发光材料(见电致发光材料)
electroluminescent material
见场致发光材料eleetrolumineseent material 电致发光材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条