1)  InAlAs/InGaAs
InAIAs/InGaAs
1.
200nm gate-length GaAs-based InAlAs/InGaAs MHEMTs are fabricated by MBE epitaxial material and EBL(electron beam lithography)technology.
利用电子束光刻技术制备出200nm栅长GaAs基InAIAs/InGaAs MHEMT器件。