1) I-V output characteristics
伏-安输出特性
1.
By comparison with the traditional abrupt InGaP/GaAs HBT,the device with improved structure not only exhibits good performances of lower offset voltage and smaller turn-on voltage,but also shows better current driving capability,I-V output characteristics and AC performance b.
结果表明:在低于30 nm的一定范围内的缓变层厚度下,与突变的InGaP/GaAs HBT相比,改进型结构的InGaP/AlGaAs/GaAs HBT具有更低的offset和开启电压、更强的电流驱动能力、更好的伏-安输出特性和高频特性。
2) volt-ampere characteristic
伏安特性
1.
The volt-ampere characteristics deciding the electric arc power,which affect the fusion of the spraying powder and then influence the quality of coatings,are affected by many factors including gas species,gas flow rates,the nozzle's aperture and compression angle.
等离子弧的伏安特性决定电弧功率的大小,从而影响喷涂粒子的熔融状态,进而影响了涂层的质量。
2.
The volt-ampere characteristics of aluminum's high voltage anodization were studied in four different electrolyte systems.
对铝在4种不同电解液体系中的高压阳极氧化的伏安特性进行了讨论。
3.
By using computer and high-speed data acquisition card PCI-1711 which is based on the PCI bus,a new model of measuring system for PTCR s volt-ampere characteristic was built up.
利用PC机和基于PCI总线的高速数据采集卡PCI-1711,开发出了新型PTCR伏安特性测试系统。
3) current-voltage characteristics
伏安特性
1.
To increase the discharge energy density and the discharge stability,this paper proposed a method of bipolar corona discharge in needle-matrix electrode configuration,and investigated the current-voltage characteristics of bipolar corona discharge in Multi-Needle Electrode Configuration.
为提高电晕放电的能量密度和放电稳定性,提出了针阵列电极结构的双极电晕放电方式并研究了多针电极结构双极电晕放电的伏安特性。
2.
The influences of polarity of discharge electrode,spacing between needles,and spacing of needle and plate,on the current-voltage characteristics of multi-needle-to-plate corona discharge are experimentally researched.
实验研究了多针对板电晕放电的放电极性、尖板间距D的变化对伏安特性的影响,近似算得其伏安关系式I=CU(U-US)并确定了正、负电晕放电中的C值,由C与D的关系得出随D的减小,放电功率和电流密度增加的结论,在一定条件下实验结果与推导得到的伏安关系式吻合。
3.
This paper reports a new circuit for measuring the current-voltage characteristics of diodes, which adopts a current-modeling circuit, in which the current is taken as a signal variable.
本文报导了一种新的用于测量非线性元件伏安特性的实验电路,该电路采用的是以电流为信号变量的电流模式测量电路,并分析与比较了该电路与传统的以电压作为信号变量的电压模式测量电路的不同。
4) current-voltage characteristics
伏-安特性
5) voltage-current characteristics
伏安特性
1.
Investigation on the voltage-current characteristics of the YAG laser guiding discharge channel;
YAG激光诱导放电通道伏安特性研究
2.
Discharge waveforms and the voltage-current characteristics were obtained from experiments.
为了探讨交流电弧放电在废水处理中的应用,将经典的Mayr和Cassie电弧微分方程模型以串联电阻的方式联合起来,并针对液态工质的特点引入了最小电导参数,建立了适合水中交流电弧的数学模型;采用Matlab/Simulink软件将电弧数学模型转换为电路模型,对放电伏安特性进行了仿真分析;改变数学模型中的最小电导,分析了其对仿真结果的影响。
6) I-V characteristics
伏安特性
1.
I-V characteristics of the Metal-Semiconductor-Metal(MSM) diodes were measured in the experiment and calculated theoretically.
测试其I-V曲线,从金属—半导体MSM结构肖特基二极管的理论模型推导了这种新型紫外器件的理想伏安特性,并将实验结果与理论模型相拟合,为制造导弹来袭紫外告警探测器提供研究依据。
2.
The I-V characteristics of the Ni/4H-SiC Schottky Barrier Diode(SBD) are measured first in the temperature range from 297?K to 677?K.
采用自行研制的工作在800℃的半导体器件高温测试装置,对Ni/4H SiC肖特基二极管的伏安特性在常温297K至677K的温度范围内进行了测量,表明温度升高对正向特性的影响非常显著,而对较低偏置(30V以下)条件下的反向特性影响则比较小。
3.
Transport mechanics and I-V characteristics of SiC mer ged PiN/Schottky diodes (MPS) are simulated using MEDICI.
利用模拟软件 MEDICI对碳化硅混合 Pi N / Schottky二极管 ( MPS)的输运机理及伏安特性进行了模拟 。
补充资料：计算机输入/输出控制系统(见计算机输入/输出系统)
计算机输入/输出控制系统(见计算机输入/输出系统)
computer input/output control system
iisuanii shuru/shuehu kongzhi xitong计算机输入/输出控制系统(com-puter inPut/ou中ut eontrol system)见计算机输入/输出系统。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条