Measurement of the linewidth enhancement factor of semiconductor lasers;

For the sake of accurately estimating linewidth enhancement factor of semiconductor lasers with external cavity,optical feedback self-mixing interferometric technology and gradient-based optimization algorithm were introduced to achieve best data-theoretical fitting.

The basic principle of measuring the linewidth enhancement factor(LEF) using optical feedback self-mixing interference(OFSMI) method is introduced.

According to the definition of the factor α, the linewidth enhancement factor of a1.

A brief is proposed that nonexponential stretched exponent in KWW form relaxation function is equal to the relative configurational entropy of cooperatively rearranging region, and is inversely proportional to the critical number of molecules occurring configurational transformation in a cooperative.

By adopting the two stage bridge mode circuit net with each bridge arming with multichip resonator and using the method of rational crystal design and spread coil,the problem of flatting the pass band top has been resolved for middle band width of sing side band mode filter;and discrete top side band mode filter of 2.