The depletion region spreads into the substrate and the vertical electric field in the buried layer is enhanced,which results .

A novel SOI high voltage device with step buried oxide fixed charges(SBOC) is proposed and the breakdown model based on the 2-D Poisson equation is developed.

Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density;

Simulations with a resistive load circuit for power loss comparison at high frequency application are performed with 20V-rated power switching devices,including a BTB-JFET,a trench MOSFET(T-MOSFET)generally applied in present industry,and a conventional trench-gate bipolar-mode JFET(TB-JFET)without buried oxide,for the first time.

In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2×10 15 and 3×10 15 cm -2 ,respectively.

Experiments show that total dose radiation effect in buried oxide of SOI(Silicon on Insulator) MOS is obviously dependent on bias condition.

And next,MEDICI simulation and a numerical model are utilized to simulate the electric field inside the buried oxide and fraction of hole capture,respectively.

A novel structure with a double step buried oxide SOI (D-SBOSOI) is developed on the basis of single step buried oxide structure.