1) Threshold voltage shift
阈电压漂移
1.
The results have shown that the threshold voltage shift following the higher dose-rates irradiation plus anneal can\'t match that obtained at the lower dose-rate for PMOS,so the ionizing radiation response of PMOS isn\'t time dependent effect,but enhanced low dose rate irradiation damage.
研究表明,用较高剂量率辐照加退火不能达到其低剂量率辐照导致的阈电压漂移。
2) threshold voltage shift
阈值电压漂移
1.
The mechanisms for a-Si∶H-TFT threshold voltage shift were analyzed.
分析了a-Si∶H-TFT阈值电压漂移的机理,即分析了栅偏应力下电荷注入到SiNx∶H栅绝缘层和a-Si∶H中亚稳态的产生对TFT阈值电压漂移的影响。
2.
The threshold voltage shift induced by irradiation was studied based on the test results.
实验证明辐照使MOS管的阈值电压负向漂移,辐照时非零栅源电压引起的MOS管阈值电压漂移明显大于零栅源电压情况,宽长比对阈值电压漂移量影响不大。
3.
This paper investigates the dependence of threshold voltage shift of organic thin-film transistors (OTFT) based on copper phthalocyanin (CuPc) on gate stress voltage and stress time.
研究了有机薄膜晶体管(Oganicthinfilmtransistor,OTFT)的阈值电压漂移与栅偏置电压和偏置时间的关系、不同栅绝缘膜对OTFT阈值电压漂移的影响以及不同栅绝缘膜MIS结构的C-V特性。
3) threshold voltage shift model
阈值电压漂移模型
5) threshold shift
阈值漂移
6) reference voltage ripple
基准电压漂移
1.
Based on the LDO,this paper provides a comprehensive analysis of the key factors that have significant effect on the precision of output voltage of the power supply management ICs,such as reference voltage ripple and error amplifier voltage ripple,etc.
电源管理芯片的高精度电压输出,是电源管理技术的一个重要课题,以L DO稳压器为基础,详细分析了基准电压漂移、误差放大器电压漂移等影响电源电压输出精度的主要因素。
补充资料：标准操作冲击电压波形(见冲击电压发生器)
标准操作冲击电压波形(见冲击电压发生器)
standard switching impulse voltage waveform
b .oozhun CooZuo ChongJld，onyo boxlng标准操作冲击电压波形(standard switchingimpulse voltage waveform)见冲击电压发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条