1) current gain
电流增益
1.
SiGe/Si HBT with a current gain of 26000 in the temperature of 77K;
77K下电流增益为2.6万的SiGe/Si HBT
2.
Analysis of Current Gain in Al_(0.3) Ga_(0.22) In_(0.48) P/GaAs HBT at High Temperature\+*;
高温Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT电流增益的计算分析
3.
In Dartington transistor,the current gain and the distribution of the collectorcurrents of transistors in each stage are changed due to the introduction of stable resist-ance.
在达林顿晶体管中,由于稳定电阻的引入,使电流增益和各级管间集电极电流分配关系发生了变化。
2) current loop gain
电流环增益
3) current Gainβ
电流增益β
4) DC current gain
直流电流增益
1.
The DC current gain of the transistor with the emitter long edge parallel to orientation is greater than that of parallel to .
在对 In Ga P/ Ga As HBT特性的研究中发现 ,发射极长边与主对准边垂直 ([0 1 1 ]方向 )和平行 ([0 1 1 ]方向 )放置时 ,其直流电流增益和截止频率是不同的 。
5) gain and dark current
增益与暗电流
6) common-emitter current gain
共射极电流增益
补充资料：标准冲击电流波形(见冲击电流发生器)
标准冲击电流波形(见冲击电流发生器)
standard impulse current wave form
blaozhun ehonglld}0n4一u box]ng标准冲击电流波形(standard impulse currentwave form)见冲击电流发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条