1) Characteristic Resistance R_(os)
特征电阻R_(os)
2) Characteristic Voltage V_(os)
特征电压V_(os)
3) special resistance
特征电阻
4) resistance ratio R_(100)/R_0
电阻比R_(100)/R_0
5) specific on-resistance
特征导通电阻
1.
TrenchMOS was studied to improve the breakdown voltage(BVds),specific on-resistance(Ron) and gate-drain charge density(Qgd),which are the three most important targets of TrenchMOS.
围绕TrenchMOS的击穿电压BVds、特征导通电阻Ron和栅漏电荷Qgd这三个最重要的特性指标,对TrenchMOS进行分析和改进,提出了体内注入TrenchMOS的概念。
6) specific on resistance
特征导通电阻
1.
The mathematical model of the specific on resistance with the regular hexagonal cell power VDMOSFET is introduced in this paper.
介绍了六角形单胞功率VDMOSFET特征导通电阻的数学模型 ,计算了不同漏源击穿电压下 ,各种电阻分量在特征导通电阻中所占的比例 ,分析了阻值随电压变化的原因 。
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条