1) base resistance
基区电阻
1.
Testing base resistance r_(bb) of transistor;
晶体管基区电阻r_(bb)的测试
2.
Including a base resistance model dependent of temperature,optimuni design of the base of hish-spoed bipolar transistors at low temperatures is investigated.
本文考虑禁带变窄效应和载流子冻析效应，分析了基区掺杂浓度的分布、基区峰值浓度的大小及位置对基区渡越时间的影响，结合基区电阻的温度模型，对低温高速双极晶体管的优化设计作了探讨。
2) base resistor cancellation
基区电阻消除
3) base serial resistance
基区串联电阻
1.
With the novel modulated doping QW base and buried metal self-align process, the base lateral resistance and contact resistance of ultra-thin-base small-size SiGe HBTs are decreased by 42% and 55% respectively, which provides an effective method of resolution on base serial resistance.
采用新型调制掺杂量子阱基区结构和掩埋金属自对准工艺方法,在器件的纵向结构和制备手段上同时进行改进,使超薄基区小尺寸SiGeHBT的基区横向电阻和接触电阻分别降低42%和55%以上,有效解决了基区串联电阻的问题。
4) base-sheet resistance
基区薄层电阻
5) base spreading resistance
基区扩展电阻
6) sheet resistance for microarea
微区电阻
补充资料：铂电阻温度表(见电阻温度表)
铂电阻温度表(见电阻温度表)
表。bod旧nZu wendubiao铂电阻温度表见电阻温
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条