1) green emission
绿光发射
1.
Strong monochromatic green emission located at 514?nm has been observed when excited with 320?nm light at room temperature (RT).
报道了用射频磁控溅射法在硅衬底上制备出具有好的 (0 0 2 )择优取向的多晶ZnO薄膜 ,在 5 14nm处观察到显著的单色绿光发射峰 ;且随着氧分压的增加 ,绿光发射峰的强度减弱 。
2) green PL
绿光发射
1.
For the vacuum annealed samples at 830 ℃, the intensity of the green PL increases markedly.
研究了室温下薄膜的光致发光特性 ,观察到显著的单绿光发射 (波长为 5 1 4nm)峰。
2.
After annealing in the air, the intensity of the green PL decreased.
在室温下观察到了薄膜的紫光(398nm)和绿光发射 (490nm)。
3) studying methods
蓝绿光发射
1.
The studying methods of gas liquid two phase flow heat transfer under microgravity is also summanized.
硅基低维材料的可见光发射和ＧａＮ基材料的蓝绿光发射是９０年代半导体薄膜材料发光特性研究的两个新方向。
4) chlorophyll emission fluorescence
叶绿素发射荧光
1.
It was observed that the ratio of chlorophyll emission fluorescence F685/F735 of thylakoid membrane rised; the relative electron transport activity of PS I in chloroplast decreased significantly; and the chlorophyll-protein complex of PS I was degraded remarkably as well.
2 MPa PEG溶液根际胁迫处理24h后,类囊体膜叶绿素发射荧光强度F685/F735的比值上升;叶绿体PSI相对电子传递活性明显下降;同时PSI叶绿素蛋白复合体发生了显著降解。
5) green luminescence
绿光发光
1.
The intensity of the green luminescence varies with the doping concentrations.
掺杂后的T-ZnO出现明显的绿光发光特征,其发光强度随掺杂浓度增加先降低后增加。
6) Green-band luminescence
绿带发光
1.
The relation between Green-band luminescence of 4H-SiC homoepitaxial layer and defects;
4H-SiC同质外延的绿带发光与缺陷的关系
补充资料：导弹机动发射(见导弹发射方式)
导弹机动发射(见导弹发射方式)
maneuverable launching of missile
算薰;笙簌巍骂 able launching 式。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条