1) hot-electron injection
热电子注入
1.
Study on avalanche hot-electron injection of interface trap characteristic for thin film in nanometre range formed by PECVD;
PECVD形成纳米级薄膜界面陷阱特性的雪崩热电子注入研究
2.
This paper studies the interface trap features of novel thin rapid thermal nitrided SiOxNy film by the technique of avalanche hot-electron injection and the measurements of high frequency C-V and (luasi-static C-V characteristics.
采用雪崩热电子注入技术和高频Ｃ－Ｖ及准静态Ｃ－Ｖ特性测试，研究了新型快速热氨化的ＳｉＯｘＮｙ介质膜界面陷阱的特征，侧重于研究界面陷阱的特性与分布。
2) hot electron injection
热电子注入
1.
Physical model of interface trap for SiO x N y thin film in nanometre range has been studied by means of avalanche hot electron injection.
采用雪崩热电子注入技术研究了纳米级富氮 Si Ox Ny 薄膜界面陷阱的物理模型。
3) Electron injection
电子注入
1.
Study of electroluminescence and electron injection on novel red polyelectrolytes copolymer;
高效饱和红光聚电解质的发光及电子注入特性研究
2.
The key factors of the ineffciency of this solar cell were discussed,such as electron injection and dye/Zn~(2+) aggregate formation,and some methods were proposed to improve the solar cell efficiency.
主要讨论了电子注入、dye/Zn2+的团聚等影响染料敏化纳米ZnO薄膜太阳电池效率的关键问题。
3.
By researching the electron injection of the CdSe detector with MIS contacts, it was found that the electron injection is the important reason which affects the properties of CdSe detectors.
研究了一种制作CdSe室温核辐射探测器的新工艺 ,并通过对CdSe室温核辐射探测器MIS接触电极电子注入机理的研究发现 ,CdSe探测器形成MIS接触电极可以降低表面漏电流 ,减小探测器噪声 ,提高探测器能量分辨率 。
4) injecting electron
注入电子
5) hot electron injection and trapping
热电子注入和俘获
6) hot-carrier injection
热载子注入
1.
By comparing the MOS structure’s responses to hot-carrier injection and total dose radiation,the correlation between them is investigated.
通过对MOS电容进行热载子注入和总剂量辐照实验,探讨了MOS结构热载子注入与总剂量辐射响应的相关性。
补充资料：热电子（hotelectron）
热电子（hotelectron）
半导体中的电子可以吸收一定能量（如光子、外电场等）而被激发，处于激发态的电子称为热电子，处于激发态的电子可以向较低的能级跃迁，如果以光辐射的形式释放出能量，这就是半导体的发光现象。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条