2) magnetic-field-dependent Hall effect measurements
变磁场霍耳效应测量
3) Quantum Hall effect
量子霍耳效应
1.
This paper , tells about the experiments systematically beginning from the discovery of Hall effect by Hall , to the present Quantum Hall effect and Fraction Quantum Hall effect.
本文从霍耳发现霍耳效应开始,直到现在的量子霍耳效应和分数量子霍耳效应,较系统地讲述了这个实验。
2.
The article has derived quantum Hall conductivity from liner response theory Ku bo′s fomula by means of canonical ensemble statistic average and has explained quantum Hall effect.
从而解释了整数量子霍耳效应。
4) hall effect
霍耳效应
1.
The WO3 based gas sensor is based on hall effect.
利用霍耳效应成功地研制了WO3半导体气敏传感器。
2.
This paper analyzes the reason that Hall instrument is burned out when put in magnetic field,points out the defects of experiment device of TH Hall effect,and designs limiting circuit for protection.
分析了置于磁场中霍耳片电阻增大和易被烧坏的原因,指出TH型霍耳效应实验仪存在的缺陷,并通过设计一条限流电路的方法,起到对霍耳片的保护作用,提高了实验可靠性。
5) Hall Measureme
霍耳测量
6) giant Hall effect
巨霍耳效应
1.
The microstructure and tunneling magneto-resistance(TMR) as well as the giant Hall effect(GHE) were systematically investigated.
系统地研究了薄膜的微结构、磁性、隧道磁电阻效应(TMR)和巨霍耳效应(GHE)。
补充资料:霍耳效应
霍耳效应 Hall effect 通有电流的金属或半导体放置在与电流方向垂直的磁场中时,在垂直于电流和磁场方向上的两个侧面A、A′间产生电势差的现象(图1),1879年由E.H.霍耳首先发现。霍耳效应可用载流子受洛伦兹力作用来解释。如图2,当载流子带正电时,所受洛伦兹力f使正电荷向A面偏转,造成 A、A′两面上的电荷积累,从而形成电势差,在体内产生一横向电场E,称霍耳电场。若载流子带负电,则霍耳电场反向。当载流子所受的霍耳电场力与洛伦兹力达到平衡时,载流子不再偏转,霍耳电场具有恒定的值。霍耳电场E与电流密度j和磁感应强度B的乘积成正比,即 E=RjB 说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条
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