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1)  Fe-containing polymer film
含铁聚合物薄膜
1.
Fe-containing polymer films have been prepared by plasma enhanced metal-organic chemical vapour de-postion (PEMOCVD).
采用等离子体增强金属有机化合物化学气相沉积(PEMOCVD)工艺制备含铁聚合物薄膜
2)  Fe containing polymer composite films
含铁聚合物杂混薄膜
1.
Different working gases(H 2, Ar and O 2) are used for preparation of Fe containing polymer composite films by plasma enhanced metal organic chemistry vapour deposition(PEMOCVD).
采用等离子体增强金属有机化合物化学气相沉积(PEMOCVD)工艺,在氧化性气氛(O2)和非氧化性气氛(H2、Ar)中制备了含铁聚合物杂混薄膜。
3)  polymeric thin films containing C60
含C_(60)聚合物薄膜
4)  polymer film
聚合物薄膜
1.
According to gas and water vapor permeability of thin polymer film made from polyolefin material,gas and water va-por permeability mechanism and law of homogeneous membrane and non-homogeneous membrane for modified atmosphere packaging of fruits and vegetables was studied.
围绕聚烯烃基材料聚合物薄膜的透气、透湿性能,重点研究了适于果蔬MA保鲜的均质膜和非均质膜的透气、透湿规律和机理,建立了相关数学模型。
2.
The influences of crystalline grains and crystalline boundaries inside the P(VDF/TrFE) polymer films obtained on the optical properties were improved.
采用棱镜耦合法和偏振反射技术研究了 P(VDF/ Tr FE)聚合物薄膜光波导特性。
3.
A new method has been developed to measure electro-optic coefficients of poled polymer film based on the combination of transmission spectum and absorption spectrum.
提出了利用透过光谱法和吸收光谱法相结合测定聚合物电光系数的一种新方法 ,并求得了合成的聚氨酯聚合物薄膜在 632 。
5)  polymer films
聚合物薄膜
1.
Model of effective refractive indices of nanoporous polymer films;
一种纳米孔隙聚合物薄膜等效折射率模型
6)  polymer thin film
聚合物薄膜
1.
The common methods and their principles for determination of the electro optic coefficients of NLO polymer thin films are summarized,and the typical experimental arrangements are presented.
本文综述了测量非线性光学(NLO)聚合物薄膜材料电光系数的3种常用的方法及原理,并分别给出了典型的实验装置结构图。
补充资料:含铋层状氧化物铁电体
分子式:
CAS号:

性质:化学通式为:(Bi2O2)2+(Ax-1BxO3x-1)2-,式中,x为钙钛矿层厚度方向的元胞数,其值为1~5;A为较大阳离子,配位数为12;B为较小阳离子,配位数为6。A、B离子组合应满足∑XAVA+∑XBVB=6x,式中,x为相应于A、B位离子浓度,V为相应于A、B位离子的离子价态。这类层状氧化物中凡具有铁电行为的化合物就称为含铋层状结构氧化物。其结构是由二维钙钛矿层和层有规则地相互交替排列而成,沿层面具有较好的解理性。自发极化强度较高。压电性能和介电性能的各向异性大。居里温度高。自发极化强度、机械品质因素、频率的时间稳定性和温度稳定性都较高。常规陶瓷工艺很难获得致密烧结体,需用热压烧成新工艺。:PbBi2Nb2O9,BaBi2Nb2O9,SrBi2TaO9,Bi4Ti3O12,PbBi4Ti4O15,PbBi4Ti5O18等属这类铁电体。用于制作滤波器,换能器等。

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