1) internal resistance/conductance
内阻/电导
2) conductance/internal resistance
电导/内阻
1.
Studies on the relationship of conductance/internal resistance and performance of VRLA battery;
阀控密封铅酸蓄电池电导/内阻与电池性能关系研究
3) specific on-resistance
导通电阻
1.
This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.
在低于300V击穿电压条件下这种结构使VDMOS具有超低的比导通电阻。
2.
The electrical field peaks and the specific on-resistance have been discussed in details.
研究了常规LEDM O S,带有两块多晶硅场极板LEDM O S以及带有两块多晶硅场极板和一块铝场极板的LEDM O S表面电场分布情况,重点研究了多块场极板在不同的外加电压下,三种LEDM O S的表面峰值电场和导通电阻的变化情况。
3.
8%,and the specific on-resistance is reduced by 87.
用半导体专业软件Tsuprem4和Medici模拟证明了该模型十分有效,根据该模型优化得到的新型LDMOS的击穿电压和导通电阻分别比常规LD MOS增加58。
5) resistivity(conductivity)
电阻(导)率
6) On-Resistance
导通电阻
1.
In this paper,the working principle of VDMOSFET and the composition of on-resistance are described.
介绍了VDMOSFET工作原理和VDMOSFET导通电阻的组成。
2.
To overcome the trade-off relationship between the on-resistance and breakdown-voltage of conventional MOS power devices,a new device concept called as "superjunction" or "CoolMOS" has been proposed.
为了克服传统功率MOS导通电阻与击穿电压之间的矛盾,提出了一种新的理想器件结构,称为超级结器件或CoolMOS,CoolMOS由一系列的P型和N型半导体薄层交替排列组成。
3.
By using basic physical equation of semiconductor,such as Poisson equation,a new method to establish an exact on-resistance model based on the physical structure of VDMOS device was given.
导通电阻是衡量VDMOS器件性能的重要参数之一,是高开关效率,低功耗VDMOS器件的主要设计指标。
补充资料：表观内阻
分子式：
CAS号：
性质：在规定条件下，电池的电压变化值与相应的电流变化值的商。假定蓄电池以Il的电流值放电时的电压为V1，V2的电流值放电时电压为V2，如果I1与I2相差不大，可以认为电池的表观内阻r=(V2-V1)/(I2-I1)。
CAS号：
性质：在规定条件下，电池的电压变化值与相应的电流变化值的商。假定蓄电池以Il的电流值放电时的电压为V1，V2的电流值放电时电压为V2，如果I1与I2相差不大，可以认为电池的表观内阻r=(V2-V1)/(I2-I1)。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条