1) ultra-thin ferroelectric film
超薄铁电膜
1.
The Curie temperature expressions of ultra-thin ferroelectric films are obtained by using the trensverse field Ising model in the mean-field approximation theory under the Ω s≠Ω,J s≠J study,by means of Curie teemprerature xepressions.
采用平均场理论下的横场Ising模型 ,得到同时考虑Ωs≠Ω ,Js≠J情况下超薄铁电膜的居里温度表达式 利用所得出的居里温度表达式 ,分别计算了不同层数超薄铁电膜的居里温度与表面赝自旋相互作用和表面隧穿频率的关系 ,通过分析 ,得到一些新的由居里温度反映的表面效应信
3) ferroelectric film
铁电薄膜
1.
The influence of the surface and interface effects on the polarization distribution in ferroelectric films;
表面和界面效应对铁电薄膜极化分布的影响
2.
Effect of stress on the ferroelectric properties of ferroelectric film;
应力对铁电薄膜电滞回线及蝶形曲线的影响
3.
Separated precursor-monomer for sol-gel preparation PZT ferroelectric film;
Sol-gel独立前驱单体制备PZT铁电薄膜技术
4) ferroelectric thin films
铁电薄膜
1.
The effect of different electrode on the dielectric properties of lanthanum-doped lead titanate ferroelectric thin films;
不同电极形式对掺镧钛酸铅铁电薄膜的介电性能的影响
2.
The preparation and properties of PZT ferroelectric thin films with cobalt and Nb-doping;
Co和Nb掺杂PZT铁电薄膜的制备及性能研究
3.
Effect of heat treat temperature on the microstructure of PbSc_(0.5) Ta_ (0.5)O_3 ferroelectric thin films;
热处理温度对PST铁电薄膜微结构的影响
5) ferroelectric thin film
铁电薄膜
1.
Study development on preparing ferroelectric thin film by sol-gel process;
溶胶-凝胶法制备铁电薄膜的研究进展
2.
Design of DSP - based ferroelectric thin film parameters test system;
基于DSP的铁电薄膜参数测试系统设计
3.
Optimization of seed layer of PbTiO_3/PbZr_(0.3)Ti_(0.7)O_3/PbTiO_3 sandwich structure ferroelectric thin film;
PbTiO_3/PbZr_(0·3)Ti_(0·7)O_3/PbTiO_3夹心结构铁电薄膜子晶层的优化
6) Ferroelectric films
铁电薄膜
1.
Influences of annealing on the micro-structure of STO ferroelectric films;
热处理对STO铁电薄膜微结构的影响
2.
Impact of stress on the thermodynamic properties of ferroelectric films within the Transverse Ising model;
用横场伊辛模型研究应力对铁电薄膜的热力学性质的影响
3.
The study of the depolarization field influence on ferroelectric films within the TIM model;
用横场伊辛模型研究退极化场对铁电薄膜的影响
补充资料:制备铁电陶瓷薄膜的水平层流100级超净工作室
制备铁电陶瓷薄膜的水平层流100级超净工作室
制备铁电陶瓷薄膜的水平^流1 00级超净工作室 西}交通大学供稿
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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