1) active layer
有源层
1.
Influence of lithography before or after crystallization of active layer on the properties of poly-Si TFT;
晶化前后有源层的刻蚀对poly-Si TFT性能的影响
2.
The study of the active layer, the insulator layer, the ohmic contact layer, and the interface of a Si∶H/a SiN x ∶H in a Si TFT devices were presented in this paper The single a Si TFT device was prepared, which ratio of on to off current reached to six orders of magnitude This work laid a solid foundation for a Si∶H TFT AM LCD used for video displa
介绍了 ａ Ｓｉ∶ Ｈ Ｔ Ｆ Ｔ 开关器件的有源层、栅绝缘层、欧姆接触层以及界面特性的研究工作。
3.
The device properties of copper phthalocyanine(CuPc)-based top contact organic thin film transistors(OTFTs) with various active layer thickness were investigated.
研究了不同厚度有源层的顶电极CuPc OTFT器件的电学特性。
2) reflected sound power
有源吸声层
3) LPE
超薄有源层
1.
LPE Growth of SCH LD with Ultra-Thin Active Layer;
液相外延生长超薄有源层Al_xGa_（1－x）As／GaAs分别限制双异质结构激光器
4) Al free
无Al有源层
5) thickness of active region
有源层厚度
1.
This paper studied the effect of thickness of active region on Chaos dynamics of vertical-cavity surface-emitting lasers(VCSEL) being subject to direct current modulation by numerical simulation method.
利用数值模拟的方法研究了有源层厚度对电流调制下垂直腔面半导体激光器(VCSELs)混沌动力学行为的影响。
6) Active modification of the ionosphere
电离层有源变态
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