1) MOS control
MOS控制
1.
A new power integrated light activated MOS controlled multiway switch is described,which consists of bi directional thyristors,MOS and photoelectric devices.
介绍了一种新型功率集成光激 MOS控制多路开关 ,它由双向晶闸管、MOS器件、光电器件组成。
2) MCT
MOS控制晶闸管
1.
The structure and principle of the new power device MCTCMOS controlled thvristor are mtrodcued The Model of MCT under the condition of turn-off is studied.
介绍了新型功率器件MCT(MOS控制晶闸管)的基本结构,工作原理详细地探讨了MCT在关断情况下的建模,采用状态空间分析法推导出了MCT的可关断的最大电流与其结构的关系,并利用MATLAB/Simulink仿真证明了结论的正确
2.
The analytical expression for the maximum controllable current in MCT is established and it is only related to the emitter shorted current and current gain in coupled transistors, which is also simulated based on the MCT model.
建立了MOS控制晶闸管最大可关断电流的解析关系式 。
3) DGESTD
双MOS门极控制EST
4) power semiconductor devices/MCT
电力半导体器件/MOS控制型晶闸管
5) digitally controlled MOS varactor
数控MOS变容管
1.
To improve the performance of the DCO,several circuit techniques,such as inversion-mode digitally controlled MOS varactors,a digitally controlled MOS varactor matrix,dynamic element matching,and a lined MASH ΣΔ modulator,are used.
针对PHS通信系统,综合采用了反型数控MOS变容管、数控MOS变容管单元矩阵、动态元素匹配、流水线MASHΣΔ调制器等多项旨在提高新型全数控LC振荡器(DCO)性能的电路技术,在SMIC0。
6) clock-controlled neuron MOS
钟控神经MOS管
1.
Design of multi-valued double-edge-triggered D flip-flop based on clock-controlled neuron MOS transistor
基于钟控神经MOS管的多值双边沿D触发器设计
补充资料：反馈控制(见控制系统)
反馈控制(见控制系统)
feedback control
于。。伙。]伙ongZ片}反馈控制(几edbaekcontrol)见拉制系统。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条