1) B/C film
B/C膜
2) B-C-N film
硼碳氮(B-C-N)薄膜
1.
The effects of processing parameters on deposition rate of the B-C-N film were studied using a nano-indenting device.
利用直流磁控溅射技术制备了三元硼碳氮(B-C-N)薄膜,通过改变靶功率、基体偏压、沉积温度和励磁线圈电流,在相同沉积时间内得到不同厚度的薄膜。
3) B-B-C(Business to Business to Customer)
B-B-C
4) C/B method
C/B法
5) C-B spline
C-B样条
1.
Catmull-Clark Subdivision Surfaces Modelling with C-B splines;
基于C-B样条的Catmull-Clark细分曲面
2.
Linear singular blending C-B spline curve;
线性奇异混合C-B样条曲线
3.
We also give G1 blending condition of C-B spline curves and T-B spline curves.
给出了C-B样条曲线与T-B样条曲线的G1拼接条件。
6) C-B-spline
C-B样条
1.
C~2 Continuous C-B-spline Curves with Given Tangent Polygons;
带有给定切线多边形的C~2连续的C-B样条曲线
2.
The semicircle and semi-ellipse cannot be represented by a C-B-spline.
C-B样条无法精确表示半圆弧和半椭圆弧,在对C-B样条曲线和C-Bézier曲线基函数及端点特性分析的基础上,通过增加控制顶点使C-B样条曲线通过控制多边形的首末顶点并与首末边相切,给出了C-B样条曲线和C-Bézier曲线间G1拼接条件;利用C-Bézier曲线表示半圆弧和半椭圆弧,并与C-B样条曲线进行G1拼接,从而解决了C-B样条曲面造型中半圆弧和半椭圆弧的表示问题。
3.
Based on an analysis of the C-B-spline and the Cubic Bézier terminal properties,we increase the control points to make the C-B-spline curves pass the boundary vertex and the tangent direction parallel to the boundary edge.
C-B样条曲线不能精确表示半圆弧和半椭圆弧。
补充资料：i-c膜
分子式：
CAS号：
性质：见类金刚石膜
CAS号：
性质：见类金刚石膜
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