In this paper,the circuit of stable light working in pulse light source is introduced,in order to overcome the change of LED (Light Emitting Diode) and PIN s (Photodiode) characteristic curve because of the influence of temperature and other factors when optical fiber sensor is applied,and in order to ensure work s rightness and reliability of the measuring and controlling system.

MOCVD growth and properties of AlGaInP/GaAs micro-structure materials for high bright LED are presented.

The development of light emitting diode therapy in biology and medicine;

Temperatures and thermal stresses in high-power light emitting diodes;

Optimized Algorithm for Determining Dominant Wavelength of LED;

Encapsulation Technical Keys of illumination LED;

A LED Light Unit for the Projector;

Characteristic analysis and application of light-emitting diode used as tissue culture light source;

Sun photometer based on light-emitting diodes as spectrally selective detectors;

The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes;

Growth of p-GaN at low temperature and its properties as light emitting diodes;

Organic light emitting diodes based on a novel red material;

Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique