1) ultra-low pressure
超低压力
2) low-temperature and-pressure ammonia synthesis
超低温低压
3) ultra-low voltage
超低压
1.
A novel ultra-low voltage CMOS op-amp based on bulk-biased MOSFET;
一种基于衬底偏置的超低压CMOS运算放大器
2.
An ultra-low voltage,low power current reference was presented based on zero temperature coefficient(ZTC)bias point and temperature compensation.
利用零温度系数偏置点技术和温度补偿技术设计了一个超低压、低功耗的电流基准源。
3.
Based on bulk-driven and resistive subdivision techniques, an ultra-low voltage CMOS bandgap reference using second-order temperature and current feedback techniques is realized.
采用二阶温度补偿和电流反馈技术,设计实现了一种基于衬底驱动技术和电阻分压技术的超低压CMOS带隙基准电压源。
4) LTOP
低温超压
5) ultra low-dropout
超低压差
1.
A design of micropower, ultra low-dropout, low-noise, 300 mA output current, CMOS voltage Regulator is presented.
设计出一种输出电流为 30 0mA且具有微功耗超低压差低噪声性能的单片CMOS线性稳压器 ,对其电路结构及工作原理进行了分析并给出各子电路模块的设计。
6) ultra-low-pressure
超低压
1.
High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD;
渐变掩蔽图形超低压选择区域生长法制备高质量InGaAsP多量子阱材料
2.
10 GHz optical short pulse generation using tandem electroabsorption modulators monolithically integrated with distributed feedback laser by ultra-low-pressure selective area growth;
超低压选择区域生长法制备产生10GHz重复率超短光脉冲的级联电吸收调制器与分布反馈激光器单片集成光源
3.
In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22×10~2Pa) selective area growth (SAG) MOCVD technique.
采用超低压(22×10~2Pa)选择区域生长(selective area growth,SAG)金属有机化学气相沉积(metal-organic chemicalvapor deposition,MOCVD)技术成功制备了应变型InGaAsP/InGaAsP电吸收调制器(electroabsorption modulator,EAM)与分布反馈激光器(distribute feedbacklaser,DFB)单片集成光源的新型光电器件。
补充资料：超低压轮胎
分子式：
CAS号：
性质：充气压力在0.15MPa(1.5kgf/cm2)以下的充气轮胎。这种轮胎只适宜在沼泽地、疏松雪地等软地面上使用。
CAS号：
性质：充气压力在0.15MPa(1.5kgf/cm2)以下的充气轮胎。这种轮胎只适宜在沼泽地、疏松雪地等软地面上使用。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条